A monolithic, standard CMOS, fully differential optical receiver with an integrated MSM photodetector

Yu, Cheng‐Chieh; Mao, Luhong; Xiao, Xia; Sheng, X. D.; Zhang, Shilin

doi:10.1088/1674-4926/30/10/105010

Cited by 3 publications

(2 citation statements)

References 9 publications

(8 reference statements)

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“…A dummy diode or capacitor can be added to improve the receiver bandwidth by eliminating the asymmetry. In order to boost the bandwidth and the sensitivity of the optical receiver, a differential detector consisting of two similar photodiodes is used in the differential receiver [7] . The layout of the differential detector is shown in Fig.…”

Section: Design Of Optical Detectormentioning

confidence: 99%

A 1.5 Gb/s monolithically integrated optical receiver in the standard CMOS process

Xiao¹,

Mao²,

Yu³

et al. 2009

J. Semicond.

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A monolithically integrated optical receiver, including the photodetector, has been realized in Chartered 0.35 μm EEPROM CMOS technology for 850 nm optical communication. The optical receiver consists of a differential photodetector, a differential transimpedance amplifier, three limiting amplifiers and an output circuit. The experiment results show that the receiver achieves an 875 MHz 3 dB bandwidth, and a data rate of 1.5 Gb/s is achieved at a bit-error-rate of 10−9. The chip dissipates 60 mW under a single 3.3 V supply.

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Section: Design Of Optical Detectormentioning

confidence: 99%

A 1.5 Gb/s monolithically integrated optical receiver in the standard CMOS process

Xiao¹,

Mao²,

Yu³

et al. 2009

J. Semicond.

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show abstract

“…The front-end TIA [5,6] is a critical element in optical receivers, affecting the total system performance. Therefore, III-V semiconductor compounds such as GaAs and InP-InGaAs [7,8] have been exploited to realize such circuits due to their inherently high-speed, high transconductance and lownoise characteristics.…”

Section: Introductionmentioning

confidence: 99%

1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications

2009

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A zero-pole cancellation transimpedance amplifier (TIA) has been realized in 0.35 μm RF CMOS technology for Gigabit Ethernet applications. The TIA exploits a zero-pole cancellation configuration to isolate the input parasitic capacitance including photodiode capacitance from bandwidth deterioration. Simulation results show that the proposed TIA has a bandwidth of 1.9 GHz and a transimpedance gain of 65 dB·Ω for 1.5 pF photodiode capacitance, with a gain-bandwidth product of 3.4 THz·Ω. Even with 2 pF photodiode capacitance, the bandwidth exhibits a decline of only 300 MHz, confirming the mechanism of the zero-pole cancellation configuration. The input resistance is 50 Ω, and the average input noise current spectral density is 9.7 pA/√Hz. Testing results shows that the eye diagram at 1 Gb/s is wide open. The chip dissipates 17 mW under a single 3.3 V supply.

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Influence of doping position on the extinction ratio of Mach—Zehnder-interference based silicon optical modulators

Zhao¹,

Wang²,

Shao³

et al. 2012

J. Semicond.

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The extinction ratio (ER) of a Mach-Zehnder-interference (MZI) based silicon optical modulator can be strongly influenced by carrier absorption. Moreover, different doping positions can induce different distributions of injected carriers, leading to different ERs. This effect has been experimentally investigated based on the devices fabricated on silicon-on-insulator (SOI) by using a 0.18 m CMOS process. Our experiments indicate that a device with a doping position of about 0.5 m away from the edge of the rib waveguide has optimal ER.

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A monolithic, standard CMOS, fully differential optical receiver with an integrated MSM photodetector

Cited by 3 publications

References 9 publications

A 1.5 Gb/s monolithically integrated optical receiver in the standard CMOS process

A 1.5 Gb/s monolithically integrated optical receiver in the standard CMOS process

1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications

Influence of doping position on the extinction ratio of Mach—Zehnder-interference based silicon optical modulators

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