A 1.5 Gb/s monolithically integrated optical receiver in the standard CMOS process

Abstract

A monolithically integrated optical receiver, including the photodetector, has been realized in Chartered 0.35 μm EEPROM CMOS technology for 850 nm optical communication. The optical receiver consists of a differential photodetector, a differential transimpedance amplifier, three limiting amplifiers and an output circuit. The experiment results show that the receiver achieves an 875 MHz 3 dB bandwidth, and a data rate of 1.5 Gb/s is achieved at a bit-error-rate of 10−9. The chip dissipates 60 mW under a single 3.3 V supply.

A 3.125-Gb/s inductorless transimpedance amplifier for optical communication in 0.35 μm CMOS

“…Among the references mentioned in Table 1, using the same 0.35 m CMOS technology, the speed rate of the proposed TIA is higher than that of Refs. [9][10][11]. As the inductorless design, the chip area is less than in Refs.…”

“…As the inductorless design, the chip area is less than in Refs. [9][10][11][12]. In Table 1, the figure of merit (FOM) is calculated for the state of the optical receiver TIA in CMOS.…”