A monolithic MEMS switched dual-path power amplifier

Kim, M.; Hacker, J.B.; Mihailovich, R.E.; DeNatale, J.F.

doi:10.1109/7260.933772

Cited by 67 publications

(28 citation statements)

References 3 publications

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“…Signal routing can take many forms; for example, switching between two single-ended HEMT amplifiers, designed to have a different power gain, in order to avoid the drop in power-added efficiency that would occur if digital attenuators were used [57]. In RF subsystems, low loss and high isolation signal routing is very important.…”

Section: Signal Routingmentioning

confidence: 99%

Review of radio frequency microelectromechanical systems technology

Lucyszyn

2004

IEE Proceedings - Science, Measurement and Technology

124

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A review of radio frequency microelectromechanical systems (RF MEMS) technology, from the perspective of its enabling technologies (e.g. fabrication, RF micromachined components and actuation mechanisms) is presented. A unique roadmap is given that shows how enabling technologies, RF MEMS components, RF MEMS circuits and RF microsystems packaging are linked together; leading towards enhanced integrated subsystems. An overview of the associated fabrication technologies is given, in order to distinguish between the two distinct classes of RF microsystems' component technologies; non-MEMS micromachined and true MEMS. An extensive literature survey has been undertaken and key papers have been cited; from these, the motivations behind different RF MEMS technologies are highlighted. The importance of understanding the limitations for realising new and innovative ideas in RF MEMS is discussed. Finally, conclusions are drawn as to where future RF MEMS technology may lead. It is likely that the switch will continue to be the most important RF MEMS component, with future work investigating its enhanced functionality, subsystem integration and volume production. The focus of RF MEMS circuits will shift from the digital phase shifter to high-Q tuneable filters.

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Section: Signal Routingmentioning

confidence: 99%

Review of radio frequency microelectromechanical systems technology

Lucyszyn

2004

IEE Proceedings - Science, Measurement and Technology

124

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“…An MMIC combining two GaAs HEMTs with two Ohmic contact RFMEMS switches was previously reported in 2001 [6]. More recently, the European MEMS-4-MMIC project conducted a comprehensive research on the monolithic integration of RFMEMS components into a commercially available GaAs MMIC technology [7].…”

Section: Introductionmentioning

confidence: 99%

MEMS module integration into SiGe BiCMOS technology for embedded system applications

Kaynak

Wietstruck

Zhang

et al. 2011

2011 Semiconductor Conference Dresden

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The latest developments in RF-MEMS technology have paved the way for achieving high performance systems. Integration of MEMS modules into a BiCMOS process using an embedded solution is appearing to be the most promising one to enable the realization of fully integrated smart systems. This work gives an overview on different RF-MEMS modules integrated to a 0.25m SiGe BiCMOS process. Back-end-of-line (BEOL) Integration, Substrate-Etch and Above-IC modules for mm-wave applications are detailed by different MEMS device examples

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“…Compared with the semiconductor switches, RF MEMS switches have low insertion loss, good isolation, low power consumption and good linearity. Therefore, there have been many efforts to commercialize RF MEMS switches in a number of applications such as front-end-modules (FEM), phase shifters, reconfigurable elements, and tunable filters [6,7,8]. Also, researches on integration of microelectromechanical switches with millimeter wave circuits have increased so as to improve the performances of devices.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and measurements of direct contact type RF MEMS switch

Park

2007

IEICE Electron. Express

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This paper reports on the fabrication and measurements of a direct contact type RF MEMS switch. The switch is driven by the electrostatic force making the pass-through state with metal-to-metal direct contact. The actuation pad is connected with support beams to reduce switch deformation and increase contact force. The insertion loss and isolation of the switch have been measured and compared with the characteristics of the switch without support beams. The switch shows the isolation of 15.5 dB and the insertion loss of 0.34 dB at 50 GHz with an applied DC bias of 35 V. The switching time is measured to be 5.1 µs. Power handling capability and reliability of the fabricated switch have been discussed.

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A monolithic MEMS switched dual-path power amplifier

Cited by 67 publications

References 3 publications

Review of radio frequency microelectromechanical systems technology

Review of radio frequency microelectromechanical systems technology

MEMS module integration into SiGe BiCMOS technology for embedded system applications

Fabrication and measurements of direct contact type RF MEMS switch

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