A Model With Temperature-Dependent Exponent for Hot-Carrier Injection in High-Voltage nMOSFETs Involving Hot-Hole Injection and Dispersion

Dai, Mingzhi; Gao, Chao; Yap, Kinleong; Shan, Yehua; Cao, Zigui; Liao, K. Y.; Wang, Liang; Cheng, Bingying; Liu, Shaohua

doi:10.1109/ted.2008.919322

Cited by 13 publications

(5 citation statements)

References 7 publications

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“…This is unlike planar p‐n junction diode in which only a lateral field field E x occurs. Holes generated by E x (avalanche) can be now accelerated by E x and E y in the Si‐MOSLED, giving rise to higher efficiency than that of a two‐terminal Si diode LED …”

Section: Switching Speed Considerationsmentioning

confidence: 99%

Silicon MOS Optoelectronic Micro‐Nano Structure Based on Reverse‐Biased PN Junction

2019

Physica Status Solidi (a)

116

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Photon emission from Si p-channel MOS field-effect transistor (PMOSFET) having 6-μm effective gate length that is operated as a three-terminal gatecontrolled light-emitting diode is fabricated. Using a photon-emission microscope with a detector responsive to the range of 200-1000 nm, continues emission spectra is obtained in the range of 1.38-2.76 eV), which includes visible light radiation. Since the MOS-like diode utilizes the field effect induced by the gate for modulation of diode's space charge electric field and hence the optical output from the light emitting diode, the modulation speed for visible and infrared bands can attain higher frequencies with a significant offset. The fabrication of the device is fully compatible with CMOS processing procedures. Therefore, the device can serve as an optical signal modulator in the high frequency range in the optoelectronic systems fabricated by the existing standard silicon technology. This approach of light generation from silicon lightemitting device (Si-LED) provides a solution for the challenging task of manufacturing of all-silicon monolithically integrated optoelectronic systems composed of CMOS transistors and Si-LED fabricated on the same chip, in the same CMOS standard processing and in the same production lines.

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Section: Switching Speed Considerationsmentioning

confidence: 99%

Silicon MOS Optoelectronic Micro‐Nano Structure Based on Reverse‐Biased PN Junction

2019

Physica Status Solidi (a)

116

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“…Reliability models (Electromigration [5,7], Ohmic contact degradation [25,26], Coffin-Manson model [14], Eyring model [6,23,24], Humidity model [8], TDDB [15,16], Hot Carrier Injection [17,18], Hydrogen poisoning [9,[19][20][21], Thermo-mechanical stress [22], NBTI [23], etc…) are generally expressed by a function of stress parameter multiplying the exponential activation energy factor [10]. These expressions may not look much like a multiple-stress model but in fact it is as we have shown in paper presented at the 2013 IEEE Aerospace Conference [4]:…”

Section: Transition State Theory Applied To Reliability and Physics Omentioning

confidence: 99%

A unified multiple stress reliability model for microelectronic devices — Application to 1.55 μm DFB laser diode module for space validation

Bensoussan

Suhir

Henderson

et al. 2015

Microelectronics Reliability

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OATAO is an open access repository that collects the work of Toulouse researchers and makes it freely available over the web where possible. This is an author-deposited version published in : http://oatao.univ-toulouse.fr/ Eprints ID : 18032 The establishment of European suppliers for DFB Laser Modules at 1.55 μm is considered to be essential in the context of future European space programs, where availability, cost and schedule are of primary concerns. Also, in order to minimize the risk, associated with such a development, the supplier will be requested to use components which have already been evaluated and/or validated and/or qualified for space applications. The Arrhenius model is an empirical equation able to model temperature acceleration failure modes and failure mechanisms. The Eyring model is a general representation of Arrhenius equation which takes into account additional stresses than temperature. The present paper suggests to take advantage of these existing theories and derives a unified multiple stress reliability model for electronic devices in order to quantify and predict their reliability figures when operating under multiple stress in harsh environment as for Aerospace, Space, Nuclear, Submarine, Transport or Ground. Application to DFB laser diode module technologies is analyzed and discussed based on evaluation test program under implementation.

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“…Once the maximum electric field peak in SiC at the position reaches to the critical electric field, breakdown occurs. In addition, the high electric field in semiconductor will affect the endurance of the gate oxide material and lead to hot carrier effects at the bottom corner of the gate oxide, and P+ shielding layer structure under the oxide trench has been proposed [9]- [13]. Reduced surface field (RESURF) technology which has been widely used in silicon transverse power devices, makes the epitaxial layer depleted before the electric field in the lateral junction reaches the critical breakdown electric field, thus increases the BV [14] [15].…”

Section: Introductionmentioning

confidence: 99%

Simulative Researching of a 1200V SiC Trench MOSFET With an Enhanced Vertical RESURF Effect

Han

Ran

et al. 2020

IEEE J. Electron Devices Soc.

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A SiC trench MOSFET with an enhanced vertical RESURF effect is proposed and analyzed in this paper. The device features a deep oxide trench surrounded by a P-type doping layer at the source-side. With the assistant depletion effect of the P-type layer, the concentration of the N-drift region is increased and the specific on-resistance (Ron,sp) is thus reduced. The P-type doping can significantly reduce the intensity of the electric field at the gate oxide corner, and modulate the bulk electric field for the device. The breakdown voltage (BV) is therefore improved. As a result, the proposed SiC MOSFET has a better trade-off of BV and Ron,sp. The Ron,sp decreases by 59% and the BV increases by 16% for the proposed device without a CSL layer compared with the conventional trench MOSFET with a CSL layer. Meanwhile, the device exhibits a lower gate-to-drain charge (Qgd) which is reduced by 52% and the switching loss is also reduced by 19%.

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A Model With Temperature-Dependent Exponent for Hot-Carrier Injection in High-Voltage nMOSFETs Involving Hot-Hole Injection and Dispersion

Cited by 13 publications

References 7 publications

Silicon MOS Optoelectronic Micro‐Nano Structure Based on Reverse‐Biased PN Junction

Silicon MOS Optoelectronic Micro‐Nano Structure Based on Reverse‐Biased PN Junction

A unified multiple stress reliability model for microelectronic devices — Application to 1.55 μm DFB laser diode module for space validation

Simulative Researching of a 1200V SiC Trench MOSFET With an Enhanced Vertical RESURF Effect

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