2008
DOI: 10.1109/ted.2008.919322
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A Model With Temperature-Dependent Exponent for Hot-Carrier Injection in High-Voltage nMOSFETs Involving Hot-Hole Injection and Dispersion

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Cited by 13 publications
(5 citation statements)
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“…This is unlike planar p‐n junction diode in which only a lateral field field E x occurs. Holes generated by E x (avalanche) can be now accelerated by E x and E y in the Si‐MOSLED, giving rise to higher efficiency than that of a two‐terminal Si diode LED …”
Section: Switching Speed Considerationsmentioning
confidence: 99%
“…This is unlike planar p‐n junction diode in which only a lateral field field E x occurs. Holes generated by E x (avalanche) can be now accelerated by E x and E y in the Si‐MOSLED, giving rise to higher efficiency than that of a two‐terminal Si diode LED …”
Section: Switching Speed Considerationsmentioning
confidence: 99%
“…Reliability models (Electromigration [5,7], Ohmic contact degradation [25,26], Coffin-Manson model [14], Eyring model [6,23,24], Humidity model [8], TDDB [15,16], Hot Carrier Injection [17,18], Hydrogen poisoning [9,[19][20][21], Thermo-mechanical stress [22], NBTI [23], etc…) are generally expressed by a function of stress parameter multiplying the exponential activation energy factor [10]. These expressions may not look much like a multiple-stress model but in fact it is as we have shown in paper presented at the 2013 IEEE Aerospace Conference [4]:…”
Section: Transition State Theory Applied To Reliability and Physics Omentioning
confidence: 99%
“…Once the maximum electric field peak in SiC at the position reaches to the critical electric field, breakdown occurs. In addition, the high electric field in semiconductor will affect the endurance of the gate oxide material and lead to hot carrier effects at the bottom corner of the gate oxide, and P+ shielding layer structure under the oxide trench has been proposed [9]- [13]. Reduced surface field (RESURF) technology which has been widely used in silicon transverse power devices, makes the epitaxial layer depleted before the electric field in the lateral junction reaches the critical breakdown electric field, thus increases the BV [14] [15].…”
Section: Introductionmentioning
confidence: 99%