Silicon MOS Optoelectronic Micro‐Nano Structure Based on Reverse‐Biased PN Junction

Abstract

Photon emission from Si p-channel MOS field-effect transistor (PMOSFET) having 6-μm effective gate length that is operated as a three-terminal gatecontrolled light-emitting diode is fabricated. Using a photon-emission microscope with a detector responsive to the range of 200-1000 nm, continues emission spectra is obtained in the range of 1.38-2.76 eV), which includes visible light radiation. Since the MOS-like diode utilizes the field effect induced by the gate for modulation of diode's space charge electric field and hence the optical output from the light emitting diode, the modulation speed for visible and infrared bands can attain higher frequencies with a significant offset. The fabrication of the device is fully compatible with CMOS processing procedures. Therefore, the device can serve as an optical signal modulator in the high frequency range in the optoelectronic systems fabricated by the existing standard silicon technology. This approach of light generation from silicon lightemitting device (Si-LED) provides a solution for the challenging task of manufacturing of all-silicon monolithically integrated optoelectronic systems composed of CMOS transistors and Si-LED fabricated on the same chip, in the same CMOS standard processing and in the same production lines.

Photon interference of second- and third-order correlation generated by two fluorescence sources

“…Based on recent development of the second-order interference between thermal and laser light [15,16] and concept of sub wavelength interference using join detection schemes, we will study the second-and third-order temporal interference between pseudo thermal fluorescence light sources, which is employed to superposition theory in Feynman's path integral. The support for this idea comes from unified interpretation of second-order subwavelength interference based on Feynman's path integral theory from coherent and thermal sources [17][18][19][20][21] (or quantum dotted light sources [22,23]) along with their indistinguishability [21,24]. This study might help to create hope for quantum communication via classical channel.…”

Super-Gain Optical Parametric Amplification in Dielectric Micro-Resonators via BFGS Algorithm-Based Non-Linear Programming

“…Equations (5a,b) and (7a,b) show that E 2 and E 1 are coupled to each other. The pump wave E 2 acts as a source field distribution for electromagnetic wave propagation, with the stimulus wave E 1 acting as the carrier distribution in reference to the model presented in [10]. Based on Equation (7a,b), we will examine if it is feasible to amplify the low-intensity electric field E 1 , via energy coupling from the microresonator that is energized by the high-intensity electric field E 2 (see Figure 2).…”

A Microwave Platform for Reliable and Instant Interconnecting Combined with Microwave-Microfluidic Interdigital Capacitor Chips for Sensing Applications

“…In other words, since this method eliminates the necessity to characterize the measurement setup prior to flushing liquids, it was applied on our ICB measurement setup for extraction of dielectric permittivity of loading liquids. Capacitance of on-chip IDC built with interdigital electrodes [24,25] or conductive metal-organic framework (MOF) electrodes [26] using multilayered [24,26] or a metal-oxide-semiconductor (MOS) structure [25] have been investigated and modeled. According to the IDC model proposed by Igrela [24], the capacitance of the planar IDC is linearly proportional to the dielectric permittivity of the material loaded on the electrodes of the IDC.…”