Simulative Researching of a 1200V SiC Trench MOSFET With an Enhanced Vertical RESURF Effect

Han, Yi; Hu, Shengdong; Ran, Shenglong; Wang, Jianan; Liu, Tao

doi:10.1109/jeds.2020.3032649

Cited by 8 publications

(5 citation statements)

References 14 publications

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“…And the key device dimensions, doping concentrations, and other parameters are also marked in the figures. The p‐shield regions can effectively relieve the high electric field at the sharp corners of the trench oxide layer and improve the stress of the trench oxide layer [27]. The doping concentration level in the p‐shield regions is 1 × 10 18 cm −3 .…”

Section: Device Structure and Mechanismmentioning

confidence: 99%

A novel 4H‐SiC accumulation mode MOSFET with ultra‐low specific on‐resistance and improved reverse recovery capability

Kong,

Duan,

Zhang

et al. 2023

IET Power Electronics

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A novel 1440‐V 4H‐SiC accumulation mode MOSFET (ACCUFET) with ultra‐low specific on‐resistance and improved reverse recovery performance is proposed in this article. As for the proposed SiC ACCUFET, the channel region can be completely depleted by the P‐type heavily doped polysilicon gate to build an electron barrier and realize a normally‐off device. And a Schottky barrier diode (SBD) is integrated below the trench gates on both sides, which brings the feasibility of realizing reverse conduction function of the proposed ACCUFET. Also, the p‐shield regions under the Schottky contact metal provide a good electric field shielding effect for the gate oxide. Compared with the conventional SiC trench MOSFET, the numerical simulation results show that the specific on‐resistance (Ron,sp) of the proposed ACCUFET is reduced by more than 64%. The high‐frequency figures‐of‐merit HFOM [Ron,sp × Cgd] and HFOM [Ron,sp × Qgd] of the proposed device are improved by 53.19% and 58.74%, respectively. The reverse recovery time (trr), and reverse recovery charge (Qrr) are reduced by 23.28% and 82.73%, respectively. In addition, the results also indicate that the proposed device has a better latch‐up immunity compared with the conventional SiC trench MOSFET. The excellent device performance and the simple manufacturing process provide a good prospect for the application of the proposed device.

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Section: Device Structure and Mechanismmentioning

confidence: 99%

A novel 4H‐SiC accumulation mode MOSFET with ultra‐low specific on‐resistance and improved reverse recovery capability

Kong,

Duan,

Zhang

et al. 2023

IET Power Electronics

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show abstract

“…Figure 1 shows a cross-sectional schematic diagram of (a) Con-DTMOS [5], (b) SG-DTMOS, and (c) SHG-DTMOS. All the devices have a double trench structure, with a current spread layer (CSL) region that helps the current spread well [20]. They also have a source trench P + shielding region and a gate trench P + shielding region, which are shorted with the source electrode.…”

Section: Proposed Device Structuresmentioning

confidence: 99%

4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics

Cheon

Kim

2021

Materials

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In this paper, a novel 4H-SiC split heterojunction gate double trench metal-oxide-semiconductor field-effect transistor (SHG-DTMOS) is proposed to improve switching speed and loss. The device modifies the split gate double trench MOSFET (SG-DTMOS) by changing the N+ polysilicon split gate to the P+ polysilicon split gate. It has two separate P+ shielding regions under the gate to use the P+ split polysilicon gate as a heterojunction body diode and prevent reverse leakage `current. The static and most dynamic characteristics of the SHG-DTMOS are almost like those of the SG-DTMOS. However, the reverse recovery charge is improved by 65.83% and 73.45%, and the switching loss is improved by 54.84% and 44.98%, respectively, compared with the conventional double trench MOSFET (Con-DTMOS) and SG-DTMOS owing to the heterojunction.

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“…Silicon carbide (SiC) material, known for its wide bandgap, high critical breakdown electric field strength and high thermal conductivity, replaces silicon as a new generation power semiconductor material [1][2][3]. The 4H-SiC trench MOSFET (TMOS) has gained significant attention as an emerging power semiconductor device with advantages such as high breakdown voltage (BV), high current capacity, and fast switching speed, which made it widely employed in power-integrated circuits [4][5][6][7][8]. However, achieving high BV in SiC devices typically requires a long drift region and low drift region doping concentration (N D ), resulting in a significant increase in specific on-resistance (R on,sp ).…”

Section: Introductionmentioning

confidence: 99%

Investigations of 4H‐SiC trench MOSFET with integrated high‐K deep trench and gate dielectric

Yao,

Liu,

et al. 2024

IET Power Electronics

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This paper proposes and investigates a novel 4H‐SiC trench MOSFET (TMOS) with integrated high‐K deep trench and gate dielectric (INHK‐TMOS). The integrated high‐K (INHK) consists of a high‐K gate dielectric and an extended high‐K deep trench dielectric in the drift region. Firstly, the high‐K gate dielectric together with the metal‐forming high‐K metal gate structure, which increases the gate oxide capacitance (COX), reduces the threshold voltage (VTH) and the specific on‐resistance (Ron,sp). Secondly, the extended high‐K deep trench dielectric not only modulates the electric field in the drift region by introducing a new electric field peak at the bottom of the high‐K deep trench dielectric, thereby enhancing the breakdown voltage (BV), but also improves the doping concentration (ND) of the drift region by the assist depletion effect of the high‐K dielectric, further optimizing the forward conduction characteristics. Simulation results demonstrate that when compared to the conventional TMOS, the INHK‐TMOS using HfO2 exhibits a 52.6% reduction in VTH, a 52.1% reduction in Ron,sp, a 20.3% increasement in BV and a 202.3% improvement in figure of merit.

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Simulative Researching of a 1200V SiC Trench MOSFET With an Enhanced Vertical RESURF Effect

Cited by 8 publications

References 14 publications

A novel 4H‐SiC accumulation mode MOSFET with ultra‐low specific on‐resistance and improved reverse recovery capability

A novel 4H‐SiC accumulation mode MOSFET with ultra‐low specific on‐resistance and improved reverse recovery capability

4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics

Investigations of 4H‐SiC trench MOSFET with integrated high‐K deep trench and gate dielectric

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