A Model of Radiative Recombination in (In,Al,Ga)N/GaN Structures with Significant Potential Fluctuations

Dróżdż, Piotr A.; Korona, K. P.; Sarzynski, M.; Czernecki, R.; Skierbiszewski, C.; Muzioł, G.; Suski, T.

doi:10.12693/aphyspola.130.1209

Cited by 3 publications

(2 citation statements)

References 12 publications

(18 reference statements)

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“…For example, the quantitative expressions of the transition probabilities of radiative and non-radiative recombination processes in InGaN quantum well (QW) active layers, such as their temperature and carrier-density dependences, have not been clarified although there are many reports. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] Generally, photoluminescence (PL) lifetime τ PL , which corresponds to the carrier lifetime under photo-excitation, is described by the following equation,…”

Section: Introductionmentioning

confidence: 99%

Evaluation of radiative and non-radiative recombination lifetimes in InGaN quantum wells with different ion-implantation damage

Mori-Tamamura,

Morimoto,

Yamaguchi

et al. 2023

Jpn. J. Appl. Phys.

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In this study, we have separately evaluated the radiative and non-radiative recombination lifetimes for InGaN quantum well (QW) samples with different amounts of ion-implantation damage, and have investigated their temperature dependence. The radiative and non-radiative recombination lifetimes were calculated from photoluminescence (PL) decay time measured by time-resolved PL measurements, combined with the absolute internal quantum efficiency values estimated by the simultaneous photoacoustic and PL measurements. As a result, the experimentally observed radiative recombination lifetimes are almost the same for all samples, while the non-radiative recombination lifetimes are shorter for samples with larger ion-implantation damage. These findings will lead to a comprehensive understanding of carrier dynamics in InGaN-QW optical devices.

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Section: Introductionmentioning

confidence: 99%

Evaluation of radiative and non-radiative recombination lifetimes in InGaN quantum wells with different ion-implantation damage

Mori-Tamamura,

Morimoto,

Yamaguchi

et al. 2023

Jpn. J. Appl. Phys.

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“…In the case of the PL energy, however, the situation can be different, and the observed behavior of the PL energy of the alloy as a function of temperature may consist of three regions: (i) A low-temperature region, where the PL energy decreases with increasing temperature; (ii) An intermediatetemperature region, where the PL energy increases with increasing temperature; and (iii) A high-temperature region, where the PL energy again decreases with increasing temperature. The observation of such behavior, which is usually referred to as 'S-shape' behavior, has been extensively studied and reported in the literature for InGaN alloys and InGaN/GaN QWs, and was explained by thermally induced changes in the degree of carrier localization that were caused by potential fluctuations that were due to indium clustering [17][18][19][20][21][22][23]. Interestingly, 'S-shape' behavior has been also reported for AlGaN alloys with low Al contents [24,25] and for GaN/AlGaN heterostructures [26], where the localization cannot be due to alloy inhomogeneities in the wells, since they consist of binary GaN.…”

Section: Introductionmentioning

confidence: 99%

The Role of the Built-In Electric Field in Recombination Processes of GaN/AlGaN Quantum Wells: Temperature- and Pressure-Dependent Study of Polar and Non-Polar Structures

et al. 2022

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In this paper, we present a comparative analysis of the optical properties of non-polar and polar GaN/AlGaN multi-quantum well (MQW) structures by time-resolved photoluminescence (TRPL) and pressure-dependent studies. The lack of internal electric fields across the non-polar structures results in an improved electron and hole wavefunction overlap with respect to the polar structures. Therefore, the radiative recombination presents shorter decay times, independent of the well width. On the contrary, the presence of electric fields in the polar structures reduces the emission energy and the wavefunction overlap, which leads to a strong decrease in the recombination rate when increasing the well width. Taking into account the different energy dependences of radiative recombination in non-polar and polar structures of the same geometry, and assuming that non-radiative processes are energy independent, we attempted to explain the ‘S-shape’ behavior of the PL energy observed in polar GaN/AlGaN QWs, and its absence in non-polar structures. This approach has been applied previously to InGaN/GaN structures, showing that the interplay of radiative and non-radiative recombination processes can justify the ‘S-shape’ in polar InGaN/GaN MQWs. Our results show that the differences in the energy dependences of radiative and non-radiative recombination processes cannot explain the ‘S-shape’ behavior by itself, and localization effects due to the QW width fluctuation are also important. Additionally, the influence of the electric field on the pressure behavior of the investigated structures was studied, revealing different pressure dependences of the PL energy in non-polar and polar MQWs. Non-polar MQWs generally follow the pressure dependence of the GaN bandgap. In contrast, the pressure coefficients of the PL energy in polar QWs are highly reduced with respect to those of the bulk GaN, which is due to the hydrostatic-pressure-induced increase in the piezoelectric field in quantum structures and the nonlinear behavior of the piezoelectric constant.

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Analysis of Temperature-Dependent Photoluminescence Spectra in Mid-Wavelength Infrared InAs/InAsSb Type-II Superlattice

Murawski,

Manyk,

Kopytko

2023

J. Electron. Mater.

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Photoluminescence (PL) is one of the commonly used methods to determine the energy gap ($${E}_{\mathrm{g}}$$ E g ) of semiconductors. In order to use it correctly, however, the shape of the PL peak must be properly analyzed; otherwise, the value of $${E}_{\mathrm{g}}$$ E g is burdened with a large error. $${E}_{\mathrm{g}}$$ E g is often mistakenly attributed to the PL peak position, which in type-II superlattices (T2SLs) exhibits typical “S-shaped” behavior as a function of temperature, significantly different from the Varshni model used to define the energy gap of III-V compounds. The position peak of the PL relative to the real $${E}_{\mathrm{g}}$$ E g in T2SLs is red-shifted because of the carrier localization at low temperatures and blue-shifted because of the free carrier emission at high temperatures. To correctly determine $${E}_{\mathrm{g}}$$ E g , the shape of the PL peak should be analyzed using the theoretical PL line shape model that takes into account both localized (below the bandgap) and free carriers (above the bandgap) emissions. This work shows that the use of such a model to analyze the shape of the PL signal gives the correct results of determining $${E}_{\mathrm{g}}$$ E g for mid-wave infrared InAs/InAsSb T2SL, which showed a significant contribution of localized states in optical transitions and characteristic “S-shaped” PL peak behavior. This allowed us to determine the correct values of the Varshni coefficients for a given T2SL. The result also agrees with the theoretical calculations of $${E}_{\mathrm{g}}$$ E g made using the k·p method.

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A Model of Radiative Recombination in (In,Al,Ga)N/GaN Structures with Significant Potential Fluctuations

Cited by 3 publications

References 12 publications

Evaluation of radiative and non-radiative recombination lifetimes in InGaN quantum wells with different ion-implantation damage

Evaluation of radiative and non-radiative recombination lifetimes in InGaN quantum wells with different ion-implantation damage

The Role of the Built-In Electric Field in Recombination Processes of GaN/AlGaN Quantum Wells: Temperature- and Pressure-Dependent Study of Polar and Non-Polar Structures

Analysis of Temperature-Dependent Photoluminescence Spectra in Mid-Wavelength Infrared InAs/InAsSb Type-II Superlattice

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