Evaluation of radiative and non-radiative recombination lifetimes in InGaN quantum wells with different ion-implantation damage
Keito Mori-Tamamura,
Yuya Morimoto,
Atsushi A. Yamaguchi
et al.
Abstract:In this study, we have separately evaluated the radiative and non-radiative recombination lifetimes for InGaN quantum well (QW) samples with different amounts of ion-implantation damage, and have investigated their temperature dependence. The radiative and non-radiative recombination lifetimes were calculated from photoluminescence (PL) decay time measured by time-resolved PL measurements, combined with the absolute internal quantum efficiency values estimated by the simultaneous photoacoustic and PL measureme… Show more
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