A model for phosphorus segregation at the silicon-silicon dioxide interface

Detection of charge motion in a non-metallic silicon isolated double quantum dot

“…The effective dopant concentration is then decreased at the center of the island. Segregation, a process highly dependent on oxidation conditions [33], may also happen and dielectric screening at the interface may contribute to the localization at the sidewalls, in a manner that is dependent on processing conditions. The presence of impurity traps in a highly doped silicon device is thus not unusual.…”

Nano-Scale Measurements of Dopants and Electronic Impurities in Individual Silicon Nanowires Using Kelvin Probe Force Microscopy

“…The high surface concentration may result not only from direct surface doping, but also from surface segregation of P atoms, which has been predicted to occur in Si nanowires (Fernandez-Serra, Adessi et al 2006;Peelaers, Partoens et al 2006) and has been extensively studied in thin films (Nutzel and Abstreiter 1996;Thompson and Jernigan 2007). Specifically, the segregation of P to the Si-SiO interface (Lau, Mader et al 1989). The stability of this interfacial excess upon annealing, has been observed before in Si thin films (Schwarz, Barton et al 1981).…”

Industrial Demands on Process and Device Simulation

“…• Correct modeling of dopant profiles especially at material boundaries [17], at high concentration [18] or after ion implantation [19] • Doping activation and deactivation phenomena • Amorphization and recrystallization [20] • Mechanical stress and dislocation formation [21,22] • Processing and geometry dependence of the hysteretic properties of ferroelectric and ferromagnetic materials [23] • Modeling of so called "isolated-nested" effects, i.e. ..loading effects" during plasma deposition and etch [24] • Chemical mechanical polishing [25].…”