The strong influence of electrolytes on the partition behavior of charged species is demonstrated
in aqueous and aqueous−organic two-phase systems used for extraction. The effects are modeled
with an extended Albertsson model which takes into account the electrostatic potential difference
between coexisting phases. The partition coefficient of a species regarded may change by a
factor of 50 by the addititon of different salts. The electrostatic potential close to the interface
is then described by direct integration of the Poisson equation. The results agree with those for
the Galvani potential between the bulk phases obtained from the Albertsson model. The
influence of ionic species including surfactants on the mass transfer in extraction is discussed.
Finally, the coalescence of liquid dispersions is investigated with electrolytes present in the
system. The settling times can be varied by a factor of 1000 in some systems, if appropriate
salts are added at concentrations around 1 mol/m3. The experimental results are again
interpreted on a microscopic level on the basis of the diffusive double layers at the interface.
Homogeneous injection of holes into the gate oxide of metal-oxide-semiconductor (MOS) devices was obtained using p-channel MOS transistors under illumination conditions. Because gate hole currents could be measured the dependence of the hole trapping on the oxide electric field and on the energy of the holes at the injection point could be investigated. In contrast to results recently reported for electron injection no evidence for the generation of traps during hole injection was found. Only a small dependence of the capture cross section on the oxide field was observed. The study of the interface state generation during hole injection at various fields revealed that the amount of interface states directly generated by the injected holes is less than 5% of the number of trapped holes. For longer times a transformation process occurs and a correlation is found between the detrapping of holes and the generation of interface states.
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