A miniature 8&amp;#x2013;16 GHz packaged tunable frequency and bandwidth RF MEMS filter

Lee, Kok-Yan; Rebeiz, Gabriel M.

doi:10.1109/rfit.2009.5383729

Cited by 6 publications

(2 citation statements)

References 8 publications

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“…Compared to electromechanical technologies such as reed relays, contact-type MEMS switches are smaller and have faster switching times [2]. Both contacttype and capacitive MEMS switches have applications in radio frequency (RF) systems such as phased arrays and reconfigurable apertures for telecommunication systems, switching systems for satellite communications, singlepole N-throw switches for wireless portable or base-station applications, as well as in commercial cell phone antennae [3][4][5][6][7][8]. Compared to current solid state RF technologies such as field effect transistor (FET) switches and PIN diodes, RF MEMS switches generally have lower insertion loss (0.1 dB up to 100 GHz), higher isolation (because of lower offstate capacitances of 2-4 fF at 0.1-60 GHz), lower power consumption (10-100 nJ per switching cycle), and higher linearity [1].…”

Section: Introductionmentioning

confidence: 99%

Hot-switched lifetime and damage characteristics of MEMS switch contacts

Hennessy

Basu

Adams

et al. 2013

J. Micromech. Microeng.

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Using a custom built contact testing system, direct current micro contact damage under hot-switching conditions was explored in ruthenium-on-ruthenium contacts operated at a contact force of approximately 400 μN. For the first time, contact damage on making and breaking contact under bias (leading and trailing edge hot switching) is compared. Trailing-edge hot switching leads to significantly higher adhesion (1.5-4 times higher) than leading-edge hot switching. The high-voltage tests (3.5 V) lead to polarity-dependent material transfer, with material moving in the direction of the electric field. The amount of material transfer does not depend strongly on the current limit from 0.78 to 380 mA. The low voltage (0.71 V) tests result in much less damage, and the material transfer does not have a clear directionality. However, the amount of damage does increase significantly as the current limit is increased from 16 to 78 mA. Also observed for the first time is a new type of high-current, short duration current spike associated with hot switching events at voltages above 1.5 V. The fact that these spikes occur at the higher voltage but not at the lower voltage suggests (but does not prove) that they are associated with the polarity dependent material transfer.

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Section: Introductionmentioning

confidence: 99%

Hot-switched lifetime and damage characteristics of MEMS switch contacts

Hennessy

Basu

Adams

et al. 2013

J. Micromech. Microeng.

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“…Resonator has been used vastly in oscillators, filters and sensors [72][73][74][75][76][77]. Due to its high quality factor (Q), compatibility with CMOS process, low power, low cost batch fabrication and easy to miniaturize, RF MEMS resonator has been attractive alternative to Quartz crystal and SAW devices.…”

Section: Introduction To Rf Mems Resonator 61mentioning

confidence: 99%

Low power strain sensor based on MOS tunneling current.

Zhu¹

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This dissertation demonstrates a low power strain sensor based on the tunneling current in a metal-oxide-semiconductor (MOS) structure with a power consumption of a couple of nano-Watts (nW) with a minimum detectable strain of 0.00036%. Both DC and AC measurements were used to characterize the MOS tunneling current strain sensor. The noise level is found to be smallest in the inversion region, and therefore it is best to bias the device in the inversion region.To study the sensitivity in the inversion region, a model is developed to compute the tunneling current as a function of strain in the semiconductor.The model calculates the tunneling current due to electrons tunneling from the vii conduction band of the semiconductor to the gate (ECB tunneling current) and the tunneling current due to electrons tunneling from the valence band of the semiconductor to the gate (EVB tunneling current). It is found that the ECB tunneling current is sufficient to explain experimental gate leakage current results reported in the literature for MOSFETs with low substrate doping concentration. However, for the tunneling current strain sensor with a higher substrate doping concentration reported here, a model using both ECB and EVB tunneling current is required. The model fits our experiments.During both DC and AC measurements, the MOS tunneling current is found to drift with time. The drift could arise from the trap states within the oxide. The current drift makes it difficult to obtain an absolute measurement of the strain. Combining the tunneling current strain sensor with a resonant sensor may be a good choice because it measures changes in the mechanical resonant frequency, independent of a drift of the tunneling current amplitude. viii TABLE OF CONTENTS DEDICATION iii ACKNOWLEDGMENTS iv

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