Abstract-This paper presents a design methodology for drastically improving the hot-switching reliability of contact-type radio frequency micro-electromechanical (RF-MEMS) switches. In the proposed design, sacrificial contacts are placed in parallel with low-resistance contacts to significantly reduce the electric field across the latter. The lower field strength drastically reduces the contact degradation associated with field induced material transfer. Theoretical and numerical modeling show that the proposed protection scheme introduces minimal, if any, impact on the switch's RF performance. To realize the protection scheme, we introduce a novel mechanical design that allows the correct protection actuation sequence to be realized using a single actuator and bias electrode. As a demonstration, several 0-40 GHz RF-MEMS switches are fabricated using a robust copper sacrificial layer technique. Compared with unprotected switches, the protected switch design exhibits over 100 times improvement in hot-switching lifetime. In particular, we demonstrate 100-150 million cycle lifetime at 1 W hot-switching and 50 million cycles at 2 W hot-switching before catastrophic failure, measured in open-air lab environment. Further optimization of the structural design and contact materials is likely to further increase the hot-switching lifetime.