A methodology for experimentally based determination of gap shrinkage and effective lifetimes in the emitter and base of p-n junction solar cells and other p-n junction devices

Lindholm, F.A.; Neugroschel, A.; Sah, C. T.; Godlewski, M. P.; Brandhorst, Henry W.

doi:10.1109/t-ed.1977.18748

Cited by 64 publications

(12 citation statements)

References 14 publications

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“…Here, the minority-electron saturation current density injected into the lightly doped p-type base region, with an acceptor density equal to N , is given by [1,7]:…”

Section: Lightly Doped P-type Base-region Parametersmentioning

confidence: 99%

“…(44), indicating an accuracy of the order of 1.78%, as seen in Table 4. Further, the total saturation current density: J = J + J ' , where J ' [1,7], determined in Equation (21), is the minority-electron saturation current density J ' , injected into the lightly doped base region of n " − p junction silicon solar cells, can be used to investigate the photovoltaic conversion effect, as presented in Section 6. Finally, some concluding remarks are given and discussed in Section 7.…”

Section: Introductionmentioning

confidence: 99%

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Best Performance of n<sup>+</sup> - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I

Cong¹,

Blaise²,

Henri‐Rousseau³

2019

AJMP

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The effects of heavy doping and donor (acceptor) size on the hole (electron)-minority saturation current density J Eo (J Bo), injected respectively into the heavily (lightly) doped crystalline silicon (Si) emitter (base) region of n +-p junction, which can be applied to determine the performance of solar cells, being strongly affected by the dark saturation current density: J o ≡J Eo + J Bo , were investigated. For that, we used an effective Gaussian donor-density profile to determine J Eo , and an empirical method of two points to investigate the ideality factor n, short circuit current density J sc , fill factor (FF), and photovoltaic conversion efficiency η, expressed as functions of the open circuit voltage V oc , giving rise to a satisfactory description of our obtained results, being compared also with other existing theoretical-and-experimental ones. So, in the completely transparent and heavily doped (P-Si) emitter region, CTHD(P-Si)ER, our obtained J Eo-results were accurate within 1.78%. This accurate expression for J Eo is thus imperative for continuing the performance improvement of solar cell systems. For example, in the physical conditions (PCs) of CTHD (P-Si) ER and of lightly doped (B-Si) base region, LD(B-Si)BR, we obtained the precisions of the order of 8.1% for J sc , 7.1% for FF, and 5% for η, suggesting thus an accuracy of J Bo (≤ 8.1%). Further, in the PCs of completely opaque and heavily doped (S-Si) emitter region, COHD(S-Si)ER, and of lightly doped (acceptor-Si) base region, LD(acceptor-Si)BR, our limiting η-results are equal to: 27.77%,…, 31.55%, according to the E gi-values equal to: 1.12eV ,…, 1.34eV, given in various (B,…, Tl)-Si base regions, respectively, being due to the acceptor-size effect. Furthermore, in the PCs of CTHD (donor-Si) ER and of LD(Tl-Si)BR, our maximal η-values are equal to: 24.28%,…, 31.51%, according to the E gi-values equal to: 1.11eV ,…, 1.70eV, given in various (Sb,…, S)-Si emitter regions, respectively, being due to the donorsize effect. It should be noted that these obtained highest η-values are found to be almost equal, as: 31.51%% 31.55%, coming from the fact that the two obtained limiting J-values are almost the same.

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“…Here, the minority-electron saturation current density injected into the lightly doped p-type base region, with an acceptor density equal to N , is given by [1,7]:…”

Section: Lightly Doped P-type Base-region Parametersmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Best Performance of n<sup>+</sup> - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I

Cong¹,

Blaise²,

Henri‐Rousseau³

2019

AJMP

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“…Claims exist that MIS/SIS type cells could yield higher open circuit voltages than diffused cells [12) since, by proper choice of the metal work function, the dark forward cuiTent injec~ed from the substmte into the metal could be reduced or completely eliminated. The corresponding cuiTent in diffused cells, injected from the substrate into the diffused layer, limits the open circuit voltage in high quality single crystal cells [13]. On the other hand, since in polycrystalline films one deals with smaller diffusion lengths in the substmte, due to enhanced recombination in and near the grain boundaries, the open circuit voltage will mainly be limited by the cuiTent injected fromthe emitter into the substmte.…”

Section: General Advantag~ Of Mis and Sis Type Solar Cells On Polycrymentioning

confidence: 99%

MIS and SIS solar cells on polycrystalline silicon

Cheek¹,

Mertens

1980

Solar Cells

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Metal-Insulator-Semiconductor (MIS) and Semiconductor-Insulator-Semiconductor (SIS) structured solar cells have been considered a viable alternative to thermally diffused p-n junctions for use on polycrystalline thin-film silicon substrates. Early work indicated that thermal diffusion of a j~mction in polycrystalline silicon substrates could impose severe problems. Experimental investigations have shown that a p-n junction in polycrystalline silicon can have well behaved characteristics. The major efficiency loss mechanism, introduced by the presence of grain boundries, apparently does not come from the lower value of shunt resistance but from the additional recombination loss along the grain boundaries. This paper's purpose is to review the status of MIS and SIS solar cell technologies and assess the potential of these structures to meet low cost goals. Three major types of MIS/SIS solar cells are discussed in terms of structure, materials used in the fabrication, and the current collection under illumination~ The types of solar cells discussed include the thin metal MIS structure, the conducting oxide SIS structure, and the MIS inversion layer device. The specific advantages of a MIS/SIS solar cell are investigated by the use of theoretical calculations. The spectral response, short circuit current, open circuit voltage, fill factor, and cell efficiency have been calculated for the MIS/SIS case, the advanced diffused, and standard diffused solar cells. Several specific problem areas exist with these devices. The possible loss mechanisms in the MIS/SIS device are detailed, the cell stability and degradation mechanisms are identified, and the fabrication techniques amenable to large scale use are discussed. A major conclusion of the paper is that the MIS/SIS solar cells have no apparent advantage over diffused p-n junctions.

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“…The quantum yield of the grain is found by adding the contributions from the cylinder walls (grain boundaries) a~d the front surface junction (equations (3) and (5) respectively).…”

Section: /mentioning

confidence: 99%

Photovoltaic mechanisms in polycrystalline thin film solar cells. Quarterly technical progress report No. 3, April 1-June 30, 1979

Storti¹,

Johnson²,

Lin³

et al. 1979

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A methodology for experimentally based determination of gap shrinkage and effective lifetimes in the emitter and base of p-n junction solar cells and other p-n junction devices

Cited by 64 publications

References 14 publications

Best Performance of n<sup>+</sup> - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I

Best Performance of n<sup>+</sup> - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I

MIS and SIS solar cells on polycrystalline silicon

Photovoltaic mechanisms in polycrystalline thin film solar cells. Quarterly technical progress report No. 3, April 1-June 30, 1979

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A methodology for experimentally based determination of gap shrinkage and effective lifetimes in the emitter and base of p-n junction solar cells and other p-n junction devices

Cited by 64 publications

References 14 publications

Best Performance of n&lt;sup&gt;+&lt;/sup&gt; - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I

Best Performance of n&lt;sup&gt;+&lt;/sup&gt; - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I

MIS and SIS solar cells on polycrystalline silicon

Photovoltaic mechanisms in polycrystalline thin film solar cells. Quarterly technical progress report No. 3, April 1-June 30, 1979

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Product

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Best Performance of n<sup>+</sup> - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I

Best Performance of n<sup>+</sup> - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I