Novel electron trapping materials capable of performing optical parallel Boolean logic operations are described. An application to binary full addition based on a parallel algorithm is discussed, and experimental results are presented.
Novel electron trapping materials are capable of performing optical formation of an interconnection matrix based on the Hopfield prescribed learning rule. The matrix is further modifiable when a memory is changed or added. An association is performed using the optically formed matrix. In addition, the construction of single liquid crystal display XOR and XNOR gates for the matrix formulation is described. The XOR operation of an electroluminescent lamp is demonstrated.
Cadmium stannate (Cd2SnO4) films of 112 per square sheet resistance and 85% average transmissivity (500-650 nm) have been grown by means of rf sputtering onto silica substrates. CdS-Cu2S thin film solar cells with conversion efficiencies greater than 5% for front and rear illumination have been fabricated. The reflection of transmitted light back through the cell has increased the light generated current. Fabrication techniques are described and current-voltage and spectral response measurements are presented for frontwall and backwall modes of operation.
A novel polarization-encoded two-channel joint transform correlator is described that can produce unity interference modulation, independent of the illumination of the target and the reference.
The application of electron trapping materials to new optical architectures of associative memory based on space- and Fourier-domain inner products is described. Experimental results are presented.
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