ZnxCd1−xS films suitable for use in solar cells have been formed by simultaneous evaporating of ZnS and CdS. Lattice parameter and band gap are found to change almost linearly with composition. Electrical resistivity increases from <1 to ≳1010Ω cm as x increases from 0 to 1. Nonseries-resistance-limited ZnxCd1−xS-CuyS photovoltaic cells have exhibited open-circuit voltages greater than 0.7 V, apparently due to a better match between the ZnxCd1−xS and CuyS electron affinities.

Cadmium stannate (Cd2SnO4) films of 112 per square sheet resistance and 85% average transmissivity (500-650 nm) have been grown by means of rf sputtering onto silica substrates. CdS-Cu2S thin film solar cells with conversion efficiencies greater than 5% for front and rear illumination have been fabricated. The reflection of transmitted light back through the cell has increased the light generated current. Fabrication techniques are described and current-voltage and spectral response measurements are presented for frontwall and backwall modes of operation.

Cd,SnO4‐Schichten mit einem Flächenwiderstand von 152 pro Quadrat und einem mittleren Durchsichtigkeitsgrad von 85% (500‐650 nm) werden mit Hilfe der HF‐Zerstäubung auf durchsichtige SiOz‐Substrate aufgebracht.

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