A method for wafer level hermetic packaging of SOI-MEMS devices with embedded vertical feedthroughs using advanced MEMS process

Torunbalcı, Mustafa Mert; Alper, Said Emre; Akın, Tayfun

doi:10.1088/0960-1317/25/12/125030

Cited by 12 publications

(7 citation statements)

References 17 publications

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“…15) On the other hand, some MEMS devices require hermetic packaging not in vacuum but at controlled pressures. [16][17][18][19][20] For example, accelerometers are packaged in higher-pressure gas ambient for proper vibration damping of moveable structures compared with gyroscopes, which require a high quality-factor (Q-factor) for vibrating structures. [21][22][23] MEMS mechanical switches are also packaged in gas ambient to improve the life of switching cycles.…”

Section: Introductionmentioning

confidence: 99%

Surface activated room-temperature bonding in Ar gas ambient for MEMS encapsulation

Takagi

Kurashima

2017

Jpn. J. Appl. Phys.

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Surface activated room-temperature bonding of Si and sapphire wafers in high-purity inert gas ambient was examined. Although surface activated bonding has been mainly performed in high vacuum, Si and sapphire wafers were successfully bonded in Ar gas ambient up to 90 kPa, which is almost atmospheric pressure. The dicing test proved that the bonding prepared in Ar gas ambient was strong enough for MEMS packaging, although the bonding strength was slightly decreased compared with that prepared in vacuum. Transmission electron microscope observation revealed that the bonding interface prepared in Ar gas ambient is almost the same as that prepared in vacuum. It means that Ar atoms in the bonding ambient do not hamper the interatomic bond formation at the bonding interface. Room-temperature bonding in gas ambient enables hermetic packaging of MEMS devices, such as inertia sensors, MEMS switches, and Cs vapor cells for MEMS atomic clocks at various pressures.

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Section: Introductionmentioning

confidence: 99%

Surface activated room-temperature bonding in Ar gas ambient for MEMS encapsulation

Takagi

Kurashima

2017

Jpn. J. Appl. Phys.

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“…The resistance of the graphene electrode is 22.5 Ω before bonding and 31 Ω after. Such a resistance is better than many other devices using lateral [ 17 ] or vertical feedthroughs [ 18 , 19 , 20 ], which means it is good enough for a variety of applications like sensors. In conclusion, the conductance of the graphene electrode did not experience much degradation after anodic bonding.…”

Section: Resultsmentioning

confidence: 99%

An On-Chip Microscale Vacuum Chamber with High Sealing Performance Using Graphene as Lateral Feedthrough

Zhan

Rao

et al. 2022

Micromachines

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On-chip microscale vacuum chambers with high sealing performance and electrical feedthroughs are highly desired for microscale vacuum electronic devices and other MEMS devices. In this paper, we report an on-chip microscale vacuum chamber which achieves a high sealing performance by using monolayer graphene as lateral electrical feedthrough. A vacuum chamber with the dimensions of π × 2 mm × 2 mm × 0.5 mm is fabricated by anodically bonding a glass chip with a through-hole between two Si chips in a vacuum, after monolayer graphene electrodes have been transferred to the surface of one of the Si chips. Benefiting from the atomic thickness of monolayer graphene, the leak rate of Si–glass bonding interface with a monolayer graphene feedthrough is measured at less than 2 × 10−11 Pa·m3/s. The monolayer graphene feedthrough exhibits a minor resistance increase from 22.5 Ω to 31 Ω after anodic bonding, showing good electrical conductance. The pressure of the vacuum chamber is estimated to be 185 Pa by measuring the breakdown voltage. Such a vacuum is found to maintain for more than 50 days without obvious degradation, implying a high sealing performance with a leak rate of less than 1.02 × 10−16 Pa·m3/s.

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“…There have been several efforts to package these high-Q FBAR or RF MEMS devices using wafer capping bonding and 3D through vias vertical feedthrough technologies [ 7 , 9 , 10 , 11 ]. Wafer bonding methods include anodic and direct (or fusion) bonding [ 12 , 13 , 14 ]. Direct bonding provides reliable, low-temperature bonding solutions by adding polymer adhesive metallic material to the bonding interface.…”

Section: Introductionmentioning

confidence: 99%

Development of 3D Wafer Level Hermetic Packaging with Through Glass Vias (TGVs) and Transient Liquid Phase Bonding Technology for RF Filter

Chen

Zhong

2022

Sensors

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The development of 5G mobile communication created the need for high-frequency communication systems, which require vast quantities of radio frequency (RF) filters with a high-quality factor (Q) and low inband losses. In this study, the packaging of an RF filter with a through-glass via (TGV) interposer was designed and fabricated using a three-dimensional wafer-level package (3D WLP). TGV fabrication is a high-yielding process, which can produce high precision vias without masking and lithography and reduce the manufacturing cost compared with the through silicon via (TSV) solution. The glass interposer capping wafer contains Cu-filled TGV, a metal redistribution layer (RDL), and the bonding layer. The RF filter substrate with Au bump is bonded to the capping wafer based on Au-Sn transient liquid phase (TLP) bonding at 280 °C with a 40 kN (approximately 6.5 MPa) bonding force. Experimental results show that shear strengths of approx. 54.5 MPa can be obtained, higher than the standard requirement (~6 MPa). In addition, a comparison of the electrical performance of the RF filter package after the pre-conditional level three (Pre-Con L3) and unbiased highly accelerated stress (uHAST) tests showed no difference in insertion attenuation across the passband (<0.2 dB, standard value: <1 dB). The final packages passed the reliability tests in the field of consumer electronics. The proposed RF filter WLP achieves high performance, low cost, and superior reliability.

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A method for wafer level hermetic packaging of SOI-MEMS devices with embedded vertical feedthroughs using advanced MEMS process

Cited by 12 publications

References 17 publications

Surface activated room-temperature bonding in Ar gas ambient for MEMS encapsulation

Surface activated room-temperature bonding in Ar gas ambient for MEMS encapsulation

An On-Chip Microscale Vacuum Chamber with High Sealing Performance Using Graphene as Lateral Feedthrough

Development of 3D Wafer Level Hermetic Packaging with Through Glass Vias (TGVs) and Transient Liquid Phase Bonding Technology for RF Filter

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