Surface activated room-temperature bonding in Ar gas ambient for MEMS encapsulation

Takagi, Hideki; Kurashima, Yuichi

doi:10.7567/jjap.57.02ba04

Cited by 19 publications

(12 citation statements)

References 54 publications

(62 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…S1(b). † One can note that the bonding interface was strengthened significantly and continuously within 24 h. After 24 hours of storage, the interface was shown to be robust enough (>1.0 J m −2 ) to withstand the post-bonding process such as dicing, 48 illustrating a bonding efficiency comparable to that of sequential plasma activation (24 h). 22 Upon the storage duration exceeding 48 h, the maximum bonding energy was obtained, indicating the sufficient occurrence of dehydration reactions.…”

Section: Si-oh + Ho-simentioning

confidence: 89%

Room-temperature bonding of glass chips via PTFE-assisted plasma modification for nanofluidic applications

et al. 2023

View full text Add to dashboard Cite

show abstract

Section: Si-oh + Ho-simentioning

confidence: 89%

Room-temperature bonding of glass chips via PTFE-assisted plasma modification for nanofluidic applications

et al. 2023

View full text Add to dashboard Cite

show abstract

“…4, which has been reported to form an amorphous Al 2 O 3 interface. 33) In addition, the water stress corrosion of AlO is also indicated by the XPS analysis of the debonded AlO interface. As the peak ratio of Al-OH is measured higher for the debonding in air, the breakage of Al-O bonds and termination with OH groups are suggested.…”

Section: Discussionmentioning

confidence: 99%

Quantification of wafer bond strength under controlled atmospheres

Takeuchi¹,

Suga²

2022

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Bond strength is the most reliable criterion of the wafer bonding quality. The bond strength is affected by the stress corrosion of water from the measurement atmosphere and from the residual moisture at the bonding interface. In this study, we developed a new methodology to measure the wafer bond strength including the water stress corrosion effect under the controlled atmospheres, namely, dry atmosphere, wet atmosphere, and vacuum. The developed method experimentally demonstrates the evaluation of the water stress corrosion of the ambient air and the interfacial water separately. Furthermore, it is also indicated that the wafer stress corrosion depends on the bonding methods, such that the surface activated bonding using Si intermediate layer has high durability for corrosion and the hydrophilic bonding has low durability. This study will provide a new understanding of the relation between the bonding process and the water stress corrosion effect, especially for the interfacial water.

show abstract

“…Sapphire substrates were reported to be successfully bonded by standard SAB process, in which the surfaces were activated by Ar fast atomic bombardment irradiation. [36,39,44] These reports indicated that sapphire substrates were bonded via the amorphous-like intermediate layers. These reports concluded that the activated and unstable amorphous AlO layer can form enough bonds across the bonding surfaces.…”

Section: Stem-edx Analysismentioning

confidence: 99%

“…In general, the bond strength should be greater than 1.0 J m −2 for the post-bonding process, especially in order to endure the dicing process. [36] Therefore, a sufficient bond strength is achieved by the proposed bonding method using the AlO intermediate layer.…”

Section: Bond Strengthmentioning

confidence: 99%

Room Temperature Wafer Bonding of Glass Using Aluminum Oxide Intermediate Layer

Takeuchi

Matsumoto³

et al. 2021

Adv Materials Inter

View full text Add to dashboard Cite

applications, the glass bonding should not deteriorate the transparency at the interface for efficient light transmission. Moreover, voids at the bonding interface are obstacles as they lead to a topical decrease in transparency. For these reasons, the indirect bonding of glass using adhesive including epoxy and UV-curing resins is not appropriate since the adhesive layer deteriorates the optical characteristics and the sealing performance especially against water permeation. Hence, a direct glass bonding is highly required for the fabrication of reliable applications. The direct bonding of glass has been studied for a long time. One popular method is hydrophilic bonding, in which the glass surfaces are treated to achieve OH groups, followed by the post-bonding annealing at over 600 °C to achieve covalent bonds between the glass surfaces. In this method, the OH groups and water on the bonding surfaces are decomposed and the generated H 2 diffuses into the amorphous structure of glass (2Si-OH  →  Si-O-Si + H 2 O, Si + 2H 2 O  →  SiO 2 + 2H 2). [10-12] However, the high temperature annealing process will lead to damage at the bonding interface, which is induced by residual stress due to the mismatch of the coefficient of thermal expansion. The high temperature process also leads to damage to heat-sensitive components including electrodes, enzymes, and light sources. Furthermore, the decomposed H 2 O and OH groups can be trapped at the bonding interface, resulting in interfacial voids. [10,13] Therefore, glass bonding at room temperature is a desirable process. In order to lower the post-bonding annealing temperature, hydrophilic bonding has been modified mainly by using surface activation such as plasma and UV in the previous studies. The surface activation using O 2 and/or N 2 plasmas has been widely investigated to increase the OH groups on the glass surface. [14-16] For the surface activation by UV irradiation, the organic contamination on the surface is removed using O 3 induced by UV. In the meantime, the hydrophilicity of the glass surface is improved. [17,18] However, since the hydrophilic bonding mechanism is the polymerization of OH groups, a post-bonding annealing at over 200 °C is usually necessary for strong bonding. Recently, surface activated bonding (SAB) has been developed to bond inorganic materials at room temperature. [19-21] In its standard process, the bonding surfaces are treated with This paper presents a room temperature bonding technique of glass substrates with a transparent bonding interface. As a room temperature bonding method, surface activated bonding (SAB) is applied for the bonding of glass using Si intermediate layer. However, the bonding interface is colored by the deposited Si layers, which leads to lower applicability to optical devices. In this study, a new concept of SAB is developed using aluminum oxide intermediate layer. Glass substrates are successfully bonded at room temperature via the aluminum oxide intermediate layers activated by Ar ion beam irradiation, showing a...

show abstract

Surface activated room-temperature bonding in Ar gas ambient for MEMS encapsulation

Cited by 19 publications

References 54 publications

Room-temperature bonding of glass chips via PTFE-assisted plasma modification for nanofluidic applications

Room-temperature bonding of glass chips via PTFE-assisted plasma modification for nanofluidic applications

Quantification of wafer bond strength under controlled atmospheres

Room Temperature Wafer Bonding of Glass Using Aluminum Oxide Intermediate Layer

Contact Info

Product

Resources

About