This paper presents a new, high-performance silicon-on-insulator (SOI) MEMS gyroscope with decoupled oscillation modes. The gyroscope structure allows it to achieve matched-resonance-frequencies, large drive-mode oscillation amplitude, high sense-mode quality factor, and low mechanical cross-talk. The gyroscope is fabricated through the commercially available SOIMUMPS process of MEMSCAP Inc. The fabricated gyroscope has minimum capacitive sense gaps of 2.6 m and a structural silicon thickness of 25 m, and it fits into a chip area smaller than 3 mm × 3 mm. The fabricated gyroscope is hybrid connected to a CMOS capacitive interface ASIC chip, which is fabricated in a standard 0.6 m CMOS process. The characterization of the hybrid-connected gyroscope demonstrates a low measured noise-equivalent rate of 90 • /h/Hz 1/2 at atmospheric pressure, eliminating the need for a vacuum package for a number of applications. R 2 -non-linearity of the gyroscope is measured to be better than 0.02%. The gyroscope has a low quadrature signal of 70 • /s and a short-term bias stability of 1.5 • /s. The angular rate sensitivity of the gyroscope is 100 V/( • /s) at atmospheric pressure, which improves 24 times to 2.4 mV/( • /s) at vacuum. The noise-equivalent rate of the gyroscope at 20 mTorr vacuum is measured to be 35 • /h/Hz 1/2 , which can be improved further by reducing the electromechanical noise.
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