A low-power micromachined MOSFET gas sensor

Briand, D.; Schoot, B. van der; Rooij, N. F. de; Sundgren, H.; Lundström, I.

doi:10.1109/84.870055

Cited by 56 publications

(26 citation statements)

References 18 publications

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“…These materials have been used in new applications in the fields of optics and nanotechnology. Chemoresistive gas sensors have been developed and widely used in industrial applications and environmental control for several decades [8][9][10]. Various gas-sensitive materials such as ZnO, SnO 2 , TiO 2 and carbon nanotubes (CNTs) have been shown to detect hazardous and combustible gases [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and carbon monoxide sensing characteristics of mesostructured carbon gas sensors

Liu

Chen

Leu

et al. 2009

Sensors and Actuators B: Chemical

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Section: Introductionmentioning

confidence: 99%

Fabrication and carbon monoxide sensing characteristics of mesostructured carbon gas sensors

Liu

Chen

Leu

et al. 2009

Sensors and Actuators B: Chemical

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“…Metal Oxide Semiconductor Field Effect Transistor 40 (MOSFET) is the basic building block for almost all the 41 circuits used in mobile phones [1], [2], sensors [3], [4], 42 medical instruments [5]- [7], and so on. For the past fifty 43 years Moore's law has been the driving force for technological 44 advancements in integrated circuits industry.…”

mentioning

confidence: 99%

TCAD analysis of variation in channel doping concentration on 45nm Double-Gate MOSFET parameters

Ali

Dheer

Paliwal

et al. 2015

2015 Annual IEEE India Conference (INDICON)

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16Abstract-In this paper, the performance of a 45nm 1 7 Double Gate Metal Oxide Semiconductor Field Effect 18 Transistor (DG-MOSFET) has been analyzed at different 19 channel doping concentrations. The characteristic curves have been studied and parameters such as threshold voltage, 20 leakage current, ON-state current and output conductance 21 (gd) have been extracted and compared for channel doping 22 concentration varying from lxlO l6 cm-3 to 2xlO l8 cm-3 • The 23 drain bias has been increased from lOmV to IV to study the 24 effect of Drain Induced Barrier Lowering (DIBL) at various 25 channel doping concentrations. Furthermore, subthreshold 26 swing and ION IIoFF ratios have been studied as they are crucial 2 7 parameters for a DG-MOSFETs operation as a switch. Finally, the selection of optimum value of channel doping 28 concentration has been discussed considering trade-offs among 29 switching capability, ON-state current, power requirement and 30 short channel effects such as DIBL and leakage current. The 31 simulation and parameter extraction has been done using 32 ATLAS TM device simulator. 33 34 Keywords-45nm CMOS, channel doping variation, Double Gate MOSFET, Drain Induced Barrier Lowering (DIBL), 35 leakage current, subthreshold swing, output conductance, short 36 channel effects. 3 7 38 I. I NTRODUCTION 39 Metal Oxide Semiconductor Field Effect Transistor 40 (MOSFET) is the basic building block for almost all the 41 circuits used in mobile phones [1], [2], sensors [3], [4], 42 medical instruments [5]-[7], and so on. For the past fifty 43 years Moore's law has been the driving force for technological 44 advancements in integrated circuits industry. Moore's law is 45 predicated on doubling the transistors per square inch on 46 densely integrated circuits every two years. But with evolving 4 7 technology and growing demand of reduction of chip area and 48 lower power requirement, the conventional MOSFET posed a 49 number of problems at shorter channel lengths because of the 50 short channel effects (SCE) which come into picture. The gate 51 length of the MOSFET cannot be reduced beyond a certain 52 limit without causing power loss due to leakage current. This 53 has propelled researchers all over the world to work on 54 alternative technologies like Double Gate MOSFET [8], Fin-55 FET [9], [10], CNTFET [11], Pi and Omega-Gate MOSFETs 56 [12]. One such technology is the Double-Gate MOSFET which 5 7 consists of two gates, top and bottom, to reduce the short 60 61 62 63 64 65 channel effects (SCEs) that occur in a Single-Gate MOSFET. The second gate increases the controllability of drain current through gate voltage. A DG-MOSFET has replaced the conventional MOSFETs in numerous applications [13].This work is an attempt to study the effect of channel doping concentration on various SCEs through extensive TCAD analysis of Double-Gate MOSFET parameters. In this paper, a DG-MOSFET has been implemented with a channel length of 45nm with silicon as the substrate material. Gallium Arsenide (GaAs) can also be used a...

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“…10 Finally we include a recent similar device fabricated at IMT ͑Neuchâtel, Switzerland͒ that has a silicon island for a metal oxide semiconductor field effect transistor in the middle of a silicon nitride membrane ͑0.5 m͒ with a silicon oxynitride passivation layer. 11 The thermal efficiency of this device is relatively low ͑1.6°C/mW͒ and is probably due to the large size ͑1.8 mm͒, the use of aluminum metal lines and large mass of the silicon island. A related device is a polysilicon microfilament developed at Sandia National Laboratory with a very small mass and area.…”

Section: Resultsmentioning

confidence: 99%

Fabrication, Characterization, and Thermal Failure Analysis of a Micro Hot Plate Chemical Sensor Substrate

Fuqua

Osborn²

2004

J. Electrochem. Soc.

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This paper describes the fabrication and characterization of a micromachined, micro hot plate ͑MHP͒ sensor substrate for chemical sensor applications. The MHPs were fabricated using a silicon-processing foundry followed by a novel combination of laser and chemical etching of individual die. An IR microscope was used for thermal imaging of the MHP and shows that the device is very efficient ͑11.5°C/mW͒ and has a fast response time ͑30 ms͒. The performance of the MHP is compared to thermal measurements on a commercial sensor substrate; the MHP consumes almost 30 times less power. The MHPs also have very good performance as compared to other similar micromachined devices described in the literature. From efficiency measurements of devices in air and in vacuum, heat loss by conduction in air is determined to be ϳ30% larger than conduction through the membrane. The measured thermal efficiency in vacuum and in air is consistent with expectations based on simple analytical models, the thermal conductivities of the membrane and air, and the MHP geometry. Data are presented on the high-temperature, thermal failure mode of the devices using scanning electron microscopy and energy dispersive X-ray analysis. At temperatures close to the Si-Au eutectic point, we find that the gold metallization fails due to interaction with underlying polysilicon layer.The detection of various chemical compounds is an important task in the support of manned and unmanned space operations. 1 All of the propellants and oxidizers currently used ͑hydrogen, hydrazine, monomethyl hydrazine, dimethylhydrazine, and nitrogen tetraoxide͒ are toxic or present an explosion hazard. In addition, solid rocket motors use ammonium perchlorate, which produces prodigious quantities of HCl gas in the exhaust plume. This exhaust plume is toxic and highly corrosive and care must be taken to prevent contact with people or sensitive equipment. Therefore realtime, distributed measurements of plume concentrations are important. Contamination of payloads and sensitive components is another area where chemical detection is important to maintain mission success. Finally, where manned space flight is concerned, numerous compounds must be detected in order to protect the health of the astronauts. These are listed in the spaceborn maximum allowable concentration ͑SMAC͒ tables. 2 We have been developing chemical microsensors for space applications and previous work has included microsensors for H 2 , ozone, O atoms, and HCl. 3 Microsensors for the detection of HCl exhaust plumes are important and potential materials for this application are organic semiconductors such as phthalocyanine molecules. These are conjugated dye molecules coordinated to a metal center. The conductivity of phthalocyanine films is very sensitive to gas exposure and the gas selectivity can be modified by varying the metal center. However chemical sensors based on phthalocyanines require operation at temperatures above 150°C in order to achieve significant electrical conductivity and to induce a reversib...

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A low-power micromachined MOSFET gas sensor

Cited by 56 publications

References 18 publications

Fabrication and carbon monoxide sensing characteristics of mesostructured carbon gas sensors

Fabrication and carbon monoxide sensing characteristics of mesostructured carbon gas sensors

TCAD analysis of variation in channel doping concentration on 45nm Double-Gate MOSFET parameters

Fabrication, Characterization, and Thermal Failure Analysis of a Micro Hot Plate Chemical Sensor Substrate

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