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SemiconductingTiO 2 displays non-volatile multi-state, hysteretic behavior in its -characteristics that can be exploited as a memory material in a memristive device.We exposed memristive TiO 2 devices in the on and off resistance states to 45 Mrad(Si) of 1-MeV gamma radiation and 23 Mrad(Si) of 941-MeV Bi-ions under zero bias conditions and none of the devices were degraded. These results suggest thatTiO 2 memristive devices are good candidates for radiation hard electronics for aerospace.

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