A Less Critical Cleaning Procedure for Silicon Wafer Using Diluted HF Dip and Boiling in Isopropyl Alcohol as Final Steps

Abstract

This paper reports on the efficiency of a less critical chemical cleaning process on the removal of particulates and metal contamination from the silicon surface. Having completed the entire RCA-based cleaning process in either nonfiltered or point-of-use filtered distilled instead of deionized water, a final dip in diluted HF followed by an immersion of the wafer in boiling isopropyl alcohol (IPA) is shown to be effective in reducing particulate levels on its surface without increasing the metal contamination content with regard to previous cleaning steps. It is also shown that early breakdowns of MOS capacitors are predominantly governed by the particulate content on the silicon surface. In addition, it is shown that sulfur can remain on the silicon surface after a dip in diluted HF solution and that after a following hot IPA rinsing, sodium, potassium, calcium, and copper can also be detected on the silicon surface.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.160.4.77 Downloaded on 2015-03-30 to IP ABSTRACT Spin coating of a polymer film on a substrate with topography is modeled. Nonnewtonian fluid behavior, solvent diffusivity within coating, and coating leveling are related using this model. The dependence of the coating step height on initial coating concentration, spin speed, feature radial position, and feature dimensions is investigated. For a large feature, the coating profile is dominated by centrifugal force, while for small features the coating profile is dominated by capillary force and the coating is more level. A glassy polymer skin is formed during spinning. The coating profile is then controlled by shrinkage after the skin is formed. The predicted step height is within 10% of that measured experimentally.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.160.4.77 Downloaded on 2015-03-30 to IP

The Influence of Poly(ethylene oxide) and Illumination on the Copper Electrodeposition Process onto n-Si(100)

“…It is important to notice that for 100 mg‚L -1 PEO concentration, the N SS value corresponds to a silicon surface free of oxide. 40,41 Also, the N SS value agrees approximately with the density of surface defects (steps, vacancies, and kinks) that this material has.…”

Synthetic Bilayer Wetting on SiO2 Surfaces

“…Silicon monocrystalline slides (〈100〉 for crystal orientation, P type, 10−20 Ω cm of resistivity) of 0.4 mm mean thickness were cut with a diamond tip in order to obtain rectangular planar surfaces (25 × 15 mm). Before thermic oxidation, cleaning of the silicon surface was performed in accordance with standard procedures for silicon uses in microelectronics was carried out under dried oxygen (less than 5 ppm water) at 1150 °C/500 s using a Heatpulse 410T (A G Associates).…”

Process Oxygen Flow Influence on the Structural Properties of Thin Films Obtained by Co-Sputtering of (TeO2)x-ZnO and Au onto Si Substrates

“…The silicon oxide growth on silicon is reported to have a SiO 2 stoichiometry for aerial concentrations higher than about 1 × 10 17 cm −2 [ 33 , 34 , 35 ] according to the following chemical reaction: Si + O 2 = SiO 2 .…”

“…These abrupt modifications in Figure 2 were understood as silicon oxide growth at the TZ/Si interface as pointed out by the RBS fitting and confirmed by Raman analysis. The silicon oxide growth on silicon is reported to have a SiO2 stoichiometry for aerial concentrations higher than about 1 × 10 17 cm −2 [33][34][35] according to the following chemical reaction:…”

“…Assuming SiO2 as the silicon oxide phase, a quantitative analysis of the different phases in the TZ film was performed with the aid of RBS analysis to obtain the total aerial concentration (cm −2 ) of TeO2, ZnO, and SiO2. The percentage values indicated in Figure 2 are relative to the total aerial concentration modeled as the sum of two different aerial concentrations of two layers: the first one The silicon oxide growth on silicon is reported to have a SiO 2 stoichiometry for aerial concentrations higher than about 1 × 10 17 cm −2 [33][34][35] according to the following chemical reaction:…”