Sebastião Gomes dos Santos Filho scite author profile

Amorphous silicon carbide thin films (SiC) were produced by PECVD technique at room temperature. Post-annealing was used to crystallize the SiC films. These films were etched in reactive ion etching system using SF6 + O2 gas mixtures. The influence of O2 concentration in process was investigated by mass spectrometry technique. Using this technique, it was possible to estimate the better conditions where the etching rates are optimal and also to verify the contributions of etchant species like F and O on the production of the main volatile products SiF4, CO and CO2.

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A mechanism for electroless Cu plating onto Si

Filho¹,

Pasa²,

Hasenack³

1997

Microelectronic Engineering

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Formation of Ti(III) and Ti(IV) states in Ti3O5 nano- and microfibers obtained from hydrothermal annealing of C-doped TiO2 on Si

Stem¹,

Souza²,

Faria³

et al. 2014

Thin Solid Films

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