A Highly Efficient Power Amplifier at 5.8 GHz Using Independent Harmonic Control

Park, Yunsik; Minn, Donggyu; Kim, Seokhyeon; Moon, Junghwan; Kim, Bumman

doi:10.1109/lmwc.2016.2630853

Cited by 15 publications

(3 citation statements)

References 8 publications

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“…Furthermore, to aid matching the second harmonic output termination, a stub is used at the drain bias network, after the section filtering out the fundamental signal. The upper-band PA uses the technique in [14] to match fundamental and second harmonic impedances, independently. This method includes two λ 4 transmission lines for the second harmonic at the transistor's RF drain terminal, to avoid affecting the fundamental match, and an extra capacitor, whose selfresonant frequency is the second harmonic frequency, is included at the drain bias network, after the second harmonic matching.…”

Section: B Single-band Pa Designmentioning

confidence: 99%

Dual-Band Class J Power Amplifier at 2.45 and 5.8 GHz for UAVs Communications

et al. 2022

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A hybrid dual-band power amplifier (PA) prototype working at two Industrial, Scientific and Medical (ISM) bands, 2.4-2.5 GHz and 5.725-5.875 GHz, was designed for Unmanned Aerial Vehicles (UAVs) communication applications in Spain. Initially, two single-band PA prototypes centered at each band were designed to evaluate the single-band achievable RF performance. In all the PAs, the Gallium Nitride (GaN) Qorvo HEMT TGF2977-SM was used, as well as microstrip transmission lines technology. To achieve wideband, good linearity and efficiency, the PAs were designed in class J. The measured results for the dual-band PA prototype at the 2dB compression point at the lower and higher bands, respectively, are 14.8 dB and 11.2 dB of Transducer Power Gain (G T ), 35.7 dBm and 34.8 dBm of RF output power (Pout) and 59.2% and 43.5% of Drain Efficiency (η). At 3dB compression the respective lower and higher bands results are 37.9 dBm and 37 dBm of Pout and 73.9% and 55% of η.

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Section: B Single-band Pa Designmentioning

confidence: 99%

Dual-Band Class J Power Amplifier at 2.45 and 5.8 GHz for UAVs Communications

et al. 2022

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“…Class-F power amplifiers, which have short circuits for the even-order harmonics and open circuits for the odd-order harmonics, have been a good option to obtain high efficiency [ 16 ]. An independent second-harmonic control circuit using quarter-wave transmission lines was proposed for a harmonic tuned power amplifier [ 17 ]. Since the independent second-harmonic tuning circuit does not affect the impedance matching circuit for the fundamental while tuning the second harmonic, it makes it much easier to tune the overall circuits for the second harmonic and the fundamental, and to produce optimal performances.…”

Section: Introductionmentioning

confidence: 99%

2.4 GHz GaN HEMT Class-F Synchronous Rectifier Using an Independent Second Harmonic Tuning Circuit

Shin

et al. 2021

Sensors

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This paper proposes a class-F synchronous rectifier using an independent second harmonic tuning circuit for the power receiver of 2.4 GHz wireless power transmission systems. The synchronous rectifier can be designed by inverting the RF output port to the RF input port of the pre-designed class-F power amplifier based on time reversal duality. The design of the class-F power amplifier deploys an independent second harmonic tuning circuit in the matching networks to individually optimize the impedances of the fundamental and the second harmonic. The synchronous rectifier at the 2.4 GHz frequency is designed and implemented using a 6 W gallium nitride high electron mobility transistor (GaN HEMT). Peak RF-dc conversion efficiency of the rectifier of 69.6% is achieved with a dc output power of about 7.8 W, while the peak drain efficiency of the class-F power amplifier is 72.8%.

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“…Independent harmonic control circuit using the characteristic of a quarter-wavelength microstrip line has been proposed as matching element to achieve high efficiency performance in [25]. Peak output power of 47.2 dBm, drain efficiency of 70.2% and power gain of 10.2 dB was achieved at 5.8 GHz using GaN HEMT.…”

Section: Introductionmentioning

confidence: 99%

A 0.8 mm² Sub-GHz GaAs HBT Power Amplifier for 5G Application Achieving 57.5% PAE and 28.5 dBm Maximum Linear Output Power

et al. 2019

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This paper presents a comprehensive design of a fully integrated multistage GaAs HBT power amplifier that achieves both linearity and high efficiency within a chip area of 0.855 mm 2 for 4G and 5G applications covering the lower frequency band of 700-800 MHz. A novel linearizer circuit is integrated to a dual stage class-AB PA to minimize the AM-PM (Amplitude Modulation-Phase Modulation) distortion generated by the parasitic capacitance at the PN-junction under low bias current condition. The linearized power amplifier is able to operate within a 100 MHz linear operating bandwidth (700-800 MHz) while meeting the adjacent channel leakage ratio (ACLR) specification for 4G and 5G application. The fully integrated PA achieves a wideband efficiency of 57.5% at 28.5 dBm output power. Observing a respective input and output return losses of less than 13 dB and 10 dB, the PA delivers a power gain within the range of 34.0-37.0 dB across the operating bandwidth while exhibiting an unconditional stability characteristic from DC up to 5 GHz. The proposed linearization method paves the way of reducing the complexity of linear and high efficiency PA design which is associated with complicated and high-power consumption linearization schemes.

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A Highly Efficient Power Amplifier at 5.8 GHz Using Independent Harmonic Control

Cited by 15 publications

References 8 publications

Dual-Band Class J Power Amplifier at 2.45 and 5.8 GHz for UAVs Communications

Dual-Band Class J Power Amplifier at 2.45 and 5.8 GHz for UAVs Communications

2.4 GHz GaN HEMT Class-F Synchronous Rectifier Using an Independent Second Harmonic Tuning Circuit

A 0.8 mm² Sub-GHz GaAs HBT Power Amplifier for 5G Application Achieving 57.5% PAE and 28.5 dBm Maximum Linear Output Power

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A Highly Efficient Power Amplifier at 5.8 GHz Using Independent Harmonic Control

Cited by 15 publications

References 8 publications

Dual-Band Class J Power Amplifier at 2.45 and 5.8 GHz for UAVs Communications

Dual-Band Class J Power Amplifier at 2.45 and 5.8 GHz for UAVs Communications

2.4 GHz GaN HEMT Class-F Synchronous Rectifier Using an Independent Second Harmonic Tuning Circuit

A 0.8 mm2 Sub-GHz GaAs HBT Power Amplifier for 5G Application Achieving 57.5% PAE and 28.5 dBm Maximum Linear Output Power

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Product

Resources

About

A 0.8 mm² Sub-GHz GaAs HBT Power Amplifier for 5G Application Achieving 57.5% PAE and 28.5 dBm Maximum Linear Output Power