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Look-up table behavioral models (i.e. X-parameters, Cardiff model), input drive '|A11|' referenced, extracted directly from measurement data, provide an accurate non-linear CAD modeling solution. Typically, formulated, like s-parameters, in the travelling wave (A-B) domain, since these waves can be directly measured and controlled in the high frequency domain. However, if formulated in the admittance (I-V) domain they would provide a more robust MMIC design modelling solution supporting the capability of width and frequency scaling. Presently, no technique has been presented that allows for the extraction of admittance behavioral models directly from load-pull measurements. Previous solutions have all involved complex indirect procedures based on using an extracted (A-B) domain behavioral model and CAD simulations using voltage sources.In this paper, a new extraction approach is presented which, by including the influence of variable 'V11', allows for direct extraction of admittance behavioral models. This approach has been validated on GaN devices.Index Terms-behavioral model, non-linear modeling, GaN FETs, MMIC design, admittance domain.

This survey addresses the cutting-edge load modulation microwave and radio frequency power amplifiers for next-generation wireless communication standards. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. Moreover, advance design architectures for enhancing the Doherty power amplifier’s performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques of Doherty amplifier that meets the requirements of legacy 5G handset applications, will be discussed.

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