A High-Temperature Single-Photon Source from Nanowire Quantum Dots

Tribu, Adrien; Sallen, Gregory; Aichele, Thomas; André, R.; Poizat, Jean‐Philippe; Bougerol, Catherine; Tatarenko, S.; Kheng, K.

doi:10.1021/nl802160z

Cited by 114 publications

(99 citation statements)

References 23 publications

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“…A central goal in the active field of fundamental and applied research are semiconductor nanowires (NW). Here, the transfer of these concepts on this one-dimensional platform using axial [4,5] or radial approaches [6,7,8] are of crucial importance. For axial NW based QDs key experiments including ultra-bright single photon emission [9], quasi-static charge state control [10] and optical initialization of spin states [11] clearly underpinned the large potential of these systems.…”

Section: Introductionmentioning

confidence: 99%

Radio frequency occupancy state control of a single nanowire quantum dot

Weiß¹,

Schülein²,

Kinzel³

et al. 2014

J. Phys. D: Appl. Phys.

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Abstract.The excitonic occupancy state of a single, nanowire-based, heterostructure quantum dot is dynamically programmed by a surface acoustic wave. The quantum dot is formed by an interface or thickness fluctuation of a GaAs QW embedded in a AlGaAs shell of a GaAs − AlGaAs core-shell nanowire. As we tune the time at which carriers are photogenerated during the acoustic cycle, we find pronounced intensity oscillations of neutral and negatively charged excitons. At high acoustic power levels these oscillations become anticorrelated which enables direct acoustic programming of the dot's charge configuration, emission intensity and emission wavelength. Numerical simulations confirm that the observed modulations arise from acoustically controlled modulations of the electron and electron-hole-pair concentrations at the position of the quantum dot.

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Section: Introductionmentioning

confidence: 99%

Radio frequency occupancy state control of a single nanowire quantum dot

Weiß¹,

Schülein²,

Kinzel³

et al. 2014

J. Phys. D: Appl. Phys.

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“…14 Interestingly enough, II-VI QDs defined in thin nanowire display a fast decay dynamics. 27 This behavior could be explained by a longitudinal optical dipole component associated with a-at least partial-light hole character of the exciton.…”

mentioning

confidence: 99%

Quantum dot spontaneous emission control in a ridge waveguide

Stepanov

Delga

Zang

et al. 2015

Applied Physics Letters

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International audienceWe investigate the spontaneous emission (SE) of self-assembled InAs quantum dots (QDs) embedded in GaAs ridge waveguides that lay on a low index substrate. In thin enough waveguides, the coupling to the fundamental guided mode is vanishingly small. A pronounced anisotropy in the coupling to non-guided modes is then directly evidenced by normal-incidence photoluminescence polarization measurements. In this regime, a measurement of the QD decay rate reveals a SE inhibition by a factor up to 4. In larger wires, which ensure an optimal transverse confinement of the fundamental guided mode, the decay rate approaches the bulk value. Building on the good agreement with theoretical predictions, we infer from calculations the fraction β of SE coupled to the fundamental guided mode for some important QD excitonic complexes. For a charged exciton (isotropic in plane optical dipole), β reaches 0.61 at maximum for an on-axis QD. In the case of a purely transverse linear optical dipole, β increases up to 0.91. This optimal configuration is achievable through the selective excitation of one of the bright neutral excitons

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“…[1][2][3][4][5][6][7][8][9] The integration of QDs in one-dimensional crystals (nanowires, NWs) has increasingly gained interest because of the improvement in the photon extraction efficiency and overall functionality. [10][11][12][13][14][15][16][17][18][19] Recently, it has been shown that self-segregation processes in ternary Al x Ga 1Àx As shells lead to the observation of luminescence stemming from 3D confined excitons. Several high-resolution imaging methods have demonstrated that the Al x Ga 1Àx As shells are indeed not homogeneous and contain nanoscale Ga-rich islands.…”

mentioning

confidence: 99%

Quantum dots in the GaAs/AlxGa1−xAs core-shell nanowires: Statistical occurrence as a function of the shell thickness

Francaviglia

Fontana

Conesa‐Boj

et al. 2015

Applied Physics Letters

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Quantum dots (QDs) embedded in nanowires represent one of the most promising technologies for applications in quantum photonics. Self-assembled bottom-up fabrication is attractive to overcome the technological challenges involved in a top-down approach, but it needs post-growth investigations in order to understand the self-organization process. We investigate the QD formation by selfsegregation in Al x Ga 1Àx As shells as a function of thickness and cross-section morphology. By analysing light emission from several hundreds of emitters, we find that there is a certain thickness threshold for the observation of the QDs. The threshold becomes smaller if a thin AlAs layer is pre-deposited between the GaAs nanowire core and the Al x Ga 1Àx As shell. Our results evidence the development of the quantum emitters during the shell growth and provide more guidance for their use in quantum photonics. V C 2015 AIP Publishing LLC. [http://dx

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A High-Temperature Single-Photon Source from Nanowire Quantum Dots

Cited by 114 publications

References 23 publications

Radio frequency occupancy state control of a single nanowire quantum dot

Radio frequency occupancy state control of a single nanowire quantum dot

Quantum dot spontaneous emission control in a ridge waveguide

Quantum dots in the GaAs/AlxGa1−xAs core-shell nanowires: Statistical occurrence as a function of the shell thickness

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