A high reliable reverse-conducting IGBT with a floating P-plug

Huang

et al. 2019

A RC-LIGBT with separated LDMOS and LIGBT by the Lshaped SiO 2 layer is proposed and investigated. The L-shaped SiO 2 layer enhances the bulk electric field remarkably and decreases the surface electric field substantially in the breakdown state. At the forward conduction, the current is dominated by the unipolar mode (LDMOS) before point A and bipolar mode (LIGBT) after point B, the snapback is eliminated between point A and B due to the conductivity modulation is restricted at the LIGBT region. The Free-Wheeling diode (FWD) is realized by the LDMOS region at reverse conduction state. Compared with the conventional RC-LIGBT, the proposed device shows snapbackfree property and it increases the BV by 107% at the same time.

Section: Introductionmentioning

confidence: 99%

A snapback-free RC-LIGBT with separated LDMOS and LIGBT by the L-shaped SiO<sub>2</sub> layer

Huang

et al. 2019

“…It integrates the IGBT and the FWD into one monolithic chip by introducing an N-collector in the backside of the active cell region, which substantially reduces the die size [1,2,3,4,5]. However, several drawbacks are observed in the conventional RC-IGBT.…”

Section: Introductionmentioning

confidence: 99%

“…In this paper, a novel RC-IGBT with built-in FWD controlled by MOSFET is proposed (1) to eliminate the snapback (2) to decrease the forward voltage drop (3) to integrate the FWD in the edge termination region.…”

Section: Introductionmentioning

confidence: 99%

A RC-IGBT with built-in free wheeling diode controlled by MOSFET

Guo

et al. 2017

A reverse-conducting insulated-gate bipolar transistor (RC-IGBT) with integrated Free-Wheeling Diode (FWD) in edge termination region controlled by metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed. The Field Limiting Ring (FLR) of the edge termination acts as the anode and the N-Collector acts as the cathode of the FWD. The MOSFET makes the FLR conduct reverse current at reverse conduction and float at reverse breakdown. Compared with the conventional RC-IGBT, which integrates the FWD in active cell region, the proposed device can eliminate the snapback easily at forward conduction. In addition, the forward voltage drop can be decreased largely.

“…It can offer a higher power density in IGBT modules and reduce packaging, bonding, and silicon costs in fabrication. However, the conventional RC-IGBT has a well-known snapback phenomenon in the forward conduction, which is induced by the N-Collectors short effect [3,4,5,6,7,8]. Then the advanced separated RC-IGBT is adopted to solve the snapback by extracting the N-Collectors from the P-Collectors, and the FWD region and IGBT region are separated from each other [9,10,11].…”

Section: Introductionmentioning

confidence: 99%

A separated RC-IGBT with PIN and MPS diode

Wang

2015

A novel reverse-conducting insulated-gate bipolar transistor (RC-IGBT) featuring separated freewheeling diode (FWD) and IGBT is proposed. The proposed RC-IGBT with two kinds of anti-paralleled FWDs (PIN and MPS diode) is discussed. The simulation show that the integrated Merged P-i-N/Schottky (MPS) diode can improve the property of the reverse conduction and reverse recovery greatly than the PIN diode, the reason is that a new mechanism is adopted by the Schottky contact of the MPS diode. As the results indicate that the RC-IGBT with MPS diode achieves lower V R and J PR when compared to the PIN diode.