A snapback-free RC-LIGBT with separated LDMOS and LIGBT by the L-shaped SiO₂ layer

Abstract

A RC-LIGBT with separated LDMOS and LIGBT by the Lshaped SiO 2 layer is proposed and investigated. The L-shaped SiO 2 layer enhances the bulk electric field remarkably and decreases the surface electric field substantially in the breakdown state. At the forward conduction, the current is dominated by the unipolar mode (LDMOS) before point A and bipolar mode (LIGBT) after point B, the snapback is eliminated between point A and B due to the conductivity modulation is restricted at the LIGBT region. The Free-Wheeling diode (FWD) is realized by the LDMOS region at reverse conduction state. Compared with the conventional RC-LIGBT, the proposed device shows snapbackfree property and it increases the BV by 107% at the same time.

Research on characteristics of RC-IGBT with low switching energy consumption

“…In this paper, the FWD with an ESD structure formed by doping an N-type emitter [13]which is different from other device structures. At the same time, the P + collector region is doped to form the IGBT collector [16,17,18,19].The oxide trench structure increases the short-circuit resistance between the N + Collector and P + Collector on the back of the RC-IGBT [20,21,22,23], and reduces the cell width of RC-IGBT [25,25].The simulation results show that the switching energy consumption and reverse recovery loss of the new RC-IGBT can be significantly reduced.…”

A snapback-free and fast-switching planar-gate SOI LIGBT with three electron extracting channels

“…The silicon-on-insulator lateral insulated gate bipolar transistor (SOI LIGBT) has the advantages of large input resistance and low drive energy loss, and is widely used in intelligent power integrated circuits [1,2,3,4,5,6,7,8]. Compared with unipolar devices, both the electrons and holes of LIGBT are involved in conduction in the onstate, which leads to a relatively lower forward conduction voltage drop (VON), but also leads to a long tail of turn-off current resulting in a high turn-off loss (EOFF) when the excess carriers can only disappear through recombination [9,10,11,12,13]. The turn-off loss can be reduced by reducing the hole injection efficiency of P+ anode, but this will also reduce the conductivity modulation effect and increase VON, so it is difficult to take both into account [14,15,16,17].…”

Snapback‐free and low‐loss SAG‐LIGBT with self‐driving auxiliary gate

“…Lateral insulated bipolar transistor (LIGBT) is widely applied in smart power integrated systems due to its low power consumption and voltage control advantages [1–3]. However, the high barrier of the anode forces the carriers to be removed only by recombination, which will increase the turn‐off time of LIGBTs [4–9]. The shorted‐anode LIGBT (SA‐LIGBT) is proposed to improve the turn‐off characteristics by providing a low barrier electron channel [9–12].…”