A RC-IGBT with built-in free wheeling diode controlled by MOSFET

Chen, Weizhong; Guo, Qiao; He, L. L.; Han, Zhengsheng; Wang, Yuchan; Li, Xiaoyun

doi:10.1587/elex.14.20170817

Cited by 2 publications

(1 citation statement)

References 10 publications

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“…[1][2][3][4][5][6][7][8][9] However, the excessive carriers in the N-drift lead to the large turn-off loss E off . [10][11][12][13][14][15][16][17] The shorted anode (SA) LIGBT can effectively accelerate the extraction of electrons by introducing the N+ anode in anode. [18] However, the snapback effect is induced when the working mode of the device transforms from unipolar mode to bipolar mode.…”

Section: Introductionmentioning

confidence: 99%

Snapback-free shorted anode LIGBT with controlled anode barrier and resistance*

Li¹,

Zhang²,

Chen³

et al. 2021

Chinese Phys. B

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A novel shorted anode lateral-insulated gate bipolar transistor (SA LIGBT) with snapback-free characteristic is proposed and investigated. The device features a controlled barrier V barrier and resistance R SA in anode, named CBR LIGBT. The electron barrier is formed by the P-float/N-buffer junction, while the anode resistance includes the polysilicon layer and N-float. At forward conduction stage, the V barrier and R SA can be increased by adjusting the doping of the P-float and polysilicon layer, respectively, which can suppress the unipolar mode to eliminate the snapback. At turn-off stage, the low-resistance extraction path (N-buffer/P-float/polysilicon layer/N-float) can quickly extract the electrons in the N-drift, which can effectively accelerate the turn-off speed of the device. The simulation results show that at the same V on of 1.3 V, the E off of the CBR LIGBT is reduced by 85%, 73%, and 59.6% compared with the SSA LIGBT, conventional LIGBT, and TSA LIGBT, respectively. Additionally, at the same E off of 1.5 mJ/cm2, the CBR LIGBT achieves the lowest V on of 1.1 V compared with the other LIGBTs.

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Section: Introductionmentioning

confidence: 99%

Snapback-free shorted anode LIGBT with controlled anode barrier and resistance*

Li¹,

Zhang²,

Chen³

et al. 2021

Chinese Phys. B

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show abstract

Research on characteristics of RC-IGBT with low switching energy consumption

Lima

Xie

Zhang

et al. 2022

IEICE Electron. Express

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This paper presents a 1200V-class reverse conducting insulated gate bipolar transistor (RC-IGBT) with low switching energy consumption (LE-RC-IGBT). Its structure was designed in accordance with the latest enhanced trench and field stop technology while incorporating an anti-parallel Free Wheeling Diode (FWD) between the adjacent FS-IGBT cells. With the Emitter Shorted Diode (ESD) technology employed in the design of the FWD structure, the FWD and FS-IGBT can be made simultaneously. By using the same trench etching technique of the gate process, oxide trench was formed on the back side of the device to increase the short-circuit resistance between the N + Collector and the P + Collector on the back of the RC-IGBT. The voltage snapback phenomenon of the conventional RC-IGBT was completely eliminated. The electrical characteristics of the RC-IGBT were investigated by using Sentaurus-TCAD. Simulation results show that the switching energy consumption of the proposed LE-RC-IGBT is reduced by approximately 50%compared with the conventional one.

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A RC-IGBT with built-in free wheeling diode controlled by MOSFET

Cited by 2 publications

References 10 publications

Snapback-free shorted anode LIGBT with controlled anode barrier and resistance*

Snapback-free shorted anode LIGBT with controlled anode barrier and resistance*

Research on characteristics of RC-IGBT with low switching energy consumption

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