A High-Gain Inverter With Low-Temperature Poly-Si Oxide Thin-Film Transistors

Kim, Hyunho; Jeong, Duk Young; Lee, Suhui; Jang, Jin

doi:10.1109/led.2019.2893194

Cited by 68 publications

(53 citation statements)

References 18 publications

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“…Since the transparent material eliminates the need for backlighting in displays, this leads to low‐power displays that fit with the current era of low‐power electronics. Therefore, many researchers aim to develop transparent oxide semiconductors and contacts 8–11. One of the remarkable TCOs is indium tin oxide (ITO), which is widely being used in modern age electronics research and industries.…”

Section: Performance Comparison Between This Work and The State‐of‐thmentioning

confidence: 99%

Fully Transparent Transceiver Using Single Binary Oxide Thin Film Transistors

Hassan

Hota

Alshammari

et al. 2020

Adv Elect Materials

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Using one binary oxide, a fully transparent thin‐film transistor (TFT)‐based transceiver circuit is presented. The proposed transceiver circuit is fabricated entirely using an atomic layer deposition process. Moreover, the proposed circuit presents two modulation schemes: frequency shift keying and ON/OFF keying. The fabricated TFTs exhibit saturation mobility, threshold voltage, a subthreshold swing, and an ON/OFF ratio of 18.2 cm2 V−1 s−1, 0.9 V, 419 mVdec−1, and 109 times, respectively. Finally, the circuit functionality is demonstrated by the word “KAUST” as a Morse code.

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Section: Performance Comparison Between This Work and The State‐of‐thmentioning

confidence: 99%

Fully Transparent Transceiver Using Single Binary Oxide Thin Film Transistors

Hassan

Hota

Alshammari

et al. 2020

Adv Elect Materials

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show abstract

“…As a new application accompanying the improvement of the performance of a TFT, circuit application is attracting attention. However, at present, the performance of the p-type oxide TFTs are not so high, and LTPO by combining an n-type oxide TFT and a p-type LTPS is regarded as promising [7].In such a circuit, there is a possibility of performance degradation in pulse driving. Therefore, a pulse voltage was applied to the gate and the change in TFT characteristics was investigated.…”

Section: Analysis Of Dynamic Stress In Oxide-tftsmentioning

confidence: 99%

7‐2: Invited Paper: Hot Carrier Degradation in High Mobility Metal Oxide Thin Film Transistors

Uraoka

Takahashi

Kise

et al. 2020

Symp Digest of Tech Papers

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The existence of hot carriers in an oxide thin-film transistor was confirmed by using an emission analysis technique. It has been clarified that degradation due to hot carriers causes degradation phenomena such as a decrease in on-current without shift in threshold voltage, which has not been seen so far, in high-mobility device. Moreover, it was confirmed by photo emission analysis that the main degradation factor was hot carriers against dynamic stress in which a pulse voltage was applied to the gate.

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“…Beside, using oxide and LTPS transistors in panel circuits for low power consumption display has been reported 6–12 . In this paper, we have proposed high refresh rate and low power consumption OLED panel, by simultaneously utilizing both p‐LTPS and n‐type indium–gallium–zinc–oxide (n‐IGZO).…”

Section: Introductionmentioning

confidence: 99%

High refresh rate and low power consumption AMOLED panel using top‐gate n‐oxide and p‐LTPS TFTs

et al. 2020

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A pixel circuit and a gate driver on array for light-emitting display are presented. By simultaneously utilizing top-gate n-type oxide and p-type lowtemperature polycrystalline silicon (LTPS) thin-film transistors (TFTs), the circuits provide high refresh rate and low power consumption. An active-matrix LED (AMOLED) panel with proposed circuits is fabricated, and driving at various refresh rate ranging from 1 to 120 Hz could be achieved.

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A High-Gain Inverter With Low-Temperature Poly-Si Oxide Thin-Film Transistors

Cited by 68 publications

References 18 publications

Fully Transparent Transceiver Using Single Binary Oxide Thin Film Transistors

Fully Transparent Transceiver Using Single Binary Oxide Thin Film Transistors

7‐2: Invited Paper: Hot Carrier Degradation in High Mobility Metal Oxide Thin Film Transistors

High refresh rate and low power consumption AMOLED panel using top‐gate n‐oxide and p‐LTPS TFTs

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