Fully Transparent Transceiver Using Single Binary Oxide Thin Film Transistors

Hassan, Ali H.; Hota, M. K.; Alshammari, Fwzah H.; Alshareef, Husam N.; Salama, Khaled N.

doi:10.1002/aelm.201901083

Adv Elect Materials

2020

DOI: 10.1002/aelm.201901083

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Fully Transparent Transceiver Using Single Binary Oxide Thin Film Transistors

Ali H. Hassan

M. K. Hota

Fwzah H. Alshammari

et al.

Abstract: Using one binary oxide, a fully transparent thin‐film transistor (TFT)‐based transceiver circuit is presented. The proposed transceiver circuit is fabricated entirely using an atomic layer deposition process. Moreover, the proposed circuit presents two modulation schemes: frequency shift keying and ON/OFF keying. The fabricated TFTs exhibit saturation mobility, threshold voltage, a subthreshold swing, and an ON/OFF ratio of 18.2 cm2 V−1 s−1, 0.9 V, 419 mVdec−1, and 109 times, respectively. Finally, the circuit… Show more

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Cited by 5 publications

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References 29 publications

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confidence: 99%

Compositional Engineering of Hf‐Doped InZnSnO Films for High‐Performance and Stability Amorphous Oxide Semiconductor Thin Film Transistors

Park

Seok

Kim

et al. 2021

Adv Elect Materials

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be employed as transparent TFTs. [13][14][15] Recently, rapid advance in transparent electronic devices for transparent TV, mobile, wearable, and even VR devices require the development of transparent TFTs and their high-performance channel layers. Moreover, AOS-based TFTs could meet the requirement of the next-generation organic light emitting diode TV, such as ultra-high frame rate, larger size, and higher resolution, due to their high mobility. [16,17] Among various metal oxide semiconductor channel materials, multicomponent metal oxide semiconductors based on the In and Zn cations matrix are considered as promising candidates for channel materials for transparent TFTs, since they have inherent merits, such as high mobility, large area uniformity from their amorphous structure, and compatibility with various processing methods. [18][19][20][21][22][23] For the realization of highperformance and highly stable oxide semiconductor-based TFTs, the control of atomic ratio in the metal oxide semiconductor channel is a key factor. For this purpose, there have been a lot of research efforts on the compositional control or doping process of the oxide semiconductor channel layer. [24][25][26][27][28][29][30][31] Olziersky et al. have reported on the role of composition of InGaZnO channel on the performance of TFT devices. [31] They referred that the InGaZnO TFTs showed improved performance and worse stability characteristics, when the In/Ga ratio is higher according to the electrical resistivity of channel films. The In cations generally play a role as a mobility enhancer, due to the spheric s orbital of the indium oxide. The TFTs with indium oxide matrix showed high mobility of 10-30 cm 2 V −1 s −1 and large current at on-state, becasue the largely overlapped s orbital of In 2 O 3 enhanced the conductivity of the electrons. [32][33][34] However, the poor stability issue of TFTs with large indium contents-channel induced by the oxygen vacancies still remain a critical drawback. [35] Several elements with high bonding strength with oxygen, such as, gallium (Ga), zirconium (Zr), hafnium (Hf), and yttrium (Y), are adopted in the indium oxide channel material as an oxygen binder and a stabilizer of the channel layer. [36][37][38][39][40][41][42][43][44][45][46][47][48][49][50][51][52] Although several elements have been employed as stabilizer in oxide semiconductor channel-based TFTs, investigation of the stabilizing element in oxide semiconductor is still lacking. In particular, The Hf-doped indium zinc tin oxide (Hf:InZnSnO) channel for high performance and stable transparent thin film transistors (TFTs) is developed by using a simultaneous cosputtering of InZnSnO and HfO 2 targets. The effects of In and Hf composition in Hf:InZnSnO channel on the performance and stability under bias stress for the Hf:InZnSnO channel-based TFTs are investigated. Herein, the In cations enhance the electrical properties, while the Hf cations reduce the oxygen vacancies in the Hf:InZnSnO channel layer. Adjusting the atomic ratio of In of the...

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Compositional Engineering of Hf‐Doped InZnSnO Films for High‐Performance and Stability Amorphous Oxide Semiconductor Thin Film Transistors

Park

Seok

Kim

et al. 2021

Adv Elect Materials

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Hf-doped ZnO transistor with high bias stability and high field-effect mobility by modulation of oxygen vacancies and interfaces

Tang

Tan

Luo

et al. 2023

Journal of Materials Science & Technology

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Realization of tunable-performance in atomic layer deposited Hf-doped In2O3 thin film transistor via oxygen vacancy modulation

Zhu,

Hu,

Chen

et al. 2024

The Journal of Chemical Physics

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Due to the limitation of inherent ultra-high electron concentration, the electrical properties of In2O3 resemble those of conductors rather than semiconductors prior to special treatment. In this study, the effect of various annealing treatments on the microstructure, optical properties, and oxygen vacancies of the films and transistors is systematically investigated. Our finding reveals a progressive crystallization trend in the films with increasing annealing temperature. In addition, a higher annealing temperature is also associated with the reduction in the concentration of oxygen vacancies, as well as an elevation in both optical transmittance and optical bandgap. Furthermore, with the implementation of annealing process, the devices gradually transform from no pronounced gate control to exhibit with excellent gate control and electrical performances. The atomic layer deposited Hf-doped In2O3 thin film transistor annealed at 250 °C exhibits optimal electrical properties, with a field-effect mobility of 18.65 cm2 V−1 s−1, a subthreshold swing of 0.18 V/dec, and an Ion/Ioff ratio of 2.76 × 106. The results indicate that the impact of varying annealing temperatures can be attributed to the modulation of oxygen vacancies within the films. This work serves as a complementary study for the existing post-treatment of oxide films and provides a reliable reference for utilization of the annealing process in practical applications.

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Fully Transparent Transceiver Using Single Binary Oxide Thin Film Transistors

Cited by 5 publications

References 29 publications

Compositional Engineering of Hf‐Doped InZnSnO Films for High‐Performance and Stability Amorphous Oxide Semiconductor Thin Film Transistors

Compositional Engineering of Hf‐Doped InZnSnO Films for High‐Performance and Stability Amorphous Oxide Semiconductor Thin Film Transistors

Hf-doped ZnO transistor with high bias stability and high field-effect mobility by modulation of oxygen vacancies and interfaces

Realization of tunable-performance in atomic layer deposited Hf-doped In2O3 thin film transistor via oxygen vacancy modulation

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