Abstract:The existence of hot carriers in an oxide thin-film transistor was confirmed by using an emission analysis technique. It has been clarified that degradation due to hot carriers causes degradation phenomena such as a decrease in on-current without shift in threshold voltage, which has not been seen so far, in high-mobility device. Moreover, it was confirmed by photo emission analysis that the main degradation factor was hot carriers against dynamic stress in which a pulse voltage was applied to the gate.
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.