7‐2: Invited Paper: Hot Carrier Degradation in High Mobility Metal Oxide Thin Film Transistors

Abstract

The existence of hot carriers in an oxide thin-film transistor was confirmed by using an emission analysis technique. It has been clarified that degradation due to hot carriers causes degradation phenomena such as a decrease in on-current without shift in threshold voltage, which has not been seen so far, in high-mobility device. Moreover, it was confirmed by photo emission analysis that the main degradation factor was hot carriers against dynamic stress in which a pulse voltage was applied to the gate.