A high accuracy resonant pressure sensor by fusion bonding and trench etching

Welham, Chris; Greenwood, J. C.; Bertioli, Michael M

doi:10.1016/s0924-4247(99)00065-5

Cited by 71 publications

(36 citation statements)

References 7 publications

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“…The air damping of flexural resonators can be rendered negligible if the ambient pressure is reduced to a certain level called the critical point (Blom et al 1992;Welham et al 1999). The results indicate that the critical point for the folded-beam resonator design is about 10 mTorr, which is far beyond the measurement pressure.…”

Section: Discussionmentioning

confidence: 96%

Grain size control of (111) polycrystalline 3C-SiC films by doping used as folded-beam MEMS resonators for energy dissipation

Chang

Zorman²

2009

Microsyst Technol

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This manuscript presents an analysis of the energy dissipation mechanisms in microelectromechanical systems (MEMS)-based, flexural-mode polycrystalline silicon carbide (SiC) lateral resonators. The grain structure with columnar (111) polycrystalline 3C-SiC was unintentionally and intentionally doped by low pressure chemical vapor deposition (LPCVD). Device testing was conducted using a transimpedance amplifier-based circuit to measure the total quality factor. It was found that thermoelastic damping (TED) in SiC MEMS-based lateral resonators contributes only in a small way to the overall energy dissipation in these devices. In contrast, the dominant material property appears to be the grain size for lightly and heavily doped film, with smaller grain sizes correlating to higher solid internal losses. The data suggest that conductivity does not play a direct role in determining the quality factor despite the fact that an electrical measurement technique was used. In fact, the lowest quality factors were associated with the lowest resistivities.

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Section: Discussionmentioning

confidence: 96%

Grain size control of (111) polycrystalline 3C-SiC films by doping used as folded-beam MEMS resonators for energy dissipation

Chang

Zorman²

2009

Microsyst Technol

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“…However, recent developments of LIGA and deep RIE now make resonant lateral structures a practical device. The resonator has now been redesigned by Welham et al (2000) to overcome these problems together with a piezoresistive pickup. Figure 8.30(c) shows the new silicon process and the fabricated device is shown in Figure 8.30(d).…”

Section: Pressure Microsensorsmentioning

confidence: 99%

Microsensors

Gardner¹,

Varadan²,

Awadelkarim³

2001

Microsensors, MEMS, and Smart Devices

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“…(19,20) In this study, the measurement indicates that the critical point for the folded-beam resonator design is about 10 mTorr. Although air damping is a very signifi cant component of total energy dissipation, it is considered negligible if testing is performed under high-vacuum conditions.…”

Section: Air Dampingmentioning

confidence: 63%

Solid Internal Energy Dissipation of 3C Single-Crystal Silicon Carbide Micromechanical Resonators by Heterojunction Growth on Silicon

2010

Sensors and Materials

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A previous report shows that a 100-nm-thick free-free beam, single-crystal silicon carbide (SiC) resonator has quality factors 10 times lower than those made with a 10-μm-thick single-crystal SiC cantilever even though the free-free beam is supposed to have lower clamping loss. (1,2) This manuscript explores the above-mentioned difference using the heterojunction growth of (110) 3C-silicon carbide deposited as structural fi lms of micromechanical resonators on single-crystal silicon and polycrystalline silicon. The polycrystalline SiC resonators with smaller clamping losses were fabricated to contrast with the resonators made of single-crystal SiC. The analysis showed that solid internal energy dissipation may play a more important role than the other losses operated in tens of kilohertz. The resonators with a 2-μm-thick single-crystal SiC having Qs between the previous reports may suggest a higher defect density near the interface, which causes high solid internal dissipation. Although an electrical measurement technique was used, the dominance of this material property appeared to be due to grain size instead of conductivity.

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A high accuracy resonant pressure sensor by fusion bonding and trench etching

Cited by 71 publications

References 7 publications

Grain size control of (111) polycrystalline 3C-SiC films by doping used as folded-beam MEMS resonators for energy dissipation

Grain size control of (111) polycrystalline 3C-SiC films by doping used as folded-beam MEMS resonators for energy dissipation

Microsensors

Solid Internal Energy Dissipation of 3C Single-Crystal Silicon Carbide Micromechanical Resonators by Heterojunction Growth on Silicon

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