A heterodyne graphene FET detector at 400 GHz

Generalov, Andrey; Andersson, Michael; Yang, Xinxin; Vorobiev, Andrei; Stake, Jan

doi:10.1109/irmmw-thz.2017.8067234

Cited by 7 publications

(19 citation statements)

References 10 publications

(17 reference statements)

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“…Sample B is an hBN encapsulated GFET where two split-gates (g TL , left gate and g TR , right gate, Figure 1D), connected to the two branches of a linear dipole antenna, defining a p-n junction at its center [2]. Such antenna geometries are widely used in THz optoelectronics [2,4,24,31] and both enable broadband operation [2,32].…”

Section: Resultsmentioning

confidence: 99%

“…However, current RT THz PDs fail in targeting this combination of sensitivity, speed, and spectral range [19]. Graphene-based THz detectors relying on different physical mechanisms [4] have been widely demonstrated in the last few years [2,12,[20][21][22][23][24][25][26][27][28] and include nanodevices exploiting the photovoltaic (PV) [22], the bolometric [23], the photothermoelectric (PTE) [2,12,27] and the plasma wave (PW) or Dyakonov-Shur effects, the latter in either its non-resonant [20,25] or resonant (at low temperatures) [26] configurations. At RT, PTE photodetectors have proven to be the most sensitive and fast [2,12,27], due to the occurrence of photo-induced temperature gradients which alter the electronic thermal distribution on a fast (~100 fs) timescale [5,6] and to the absence of an applied dc current through the SLG channel, which usually increases the noise level (dark current) in alternative configurations [23].…”

Section: Introductionmentioning

confidence: 99%

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Thermoelectric graphene photodetectors with sub-nanosecond response times at terahertz frequencies

et al. 2020

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AbstractUltrafast and sensitive (noise equivalent power <1 nW Hz−1/2) light-detection in the terahertz (THz) frequency range (0.1–10 THz) and at room-temperature is key for applications such as time-resolved THz spectroscopy of gases, complex molecules and cold samples, imaging, metrology, ultra-high-speed data communications, coherent control of quantum systems, quantum optics and for capturing snapshots of ultrafast dynamics, in materials and devices, at the nanoscale. Here, we report room-temperature THz nano-receivers exploiting antenna-coupled graphene field effect transistors integrated with lithographically-patterned high-bandwidth (∼100 GHz) chips, operating with a combination of high speed (hundreds ps response time) and high sensitivity (noise equivalent power ≤120 pW Hz−1/2) at 3.4 THz. Remarkably, this is achieved with various antenna and transistor architectures (single-gate, dual-gate), whose operation frequency can be extended over the whole 0.1–10 THz range, thus paving the way for the design of ultrafast graphene arrays in the far infrared, opening concrete perspective for targeting the aforementioned applications.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Thermoelectric graphene photodetectors with sub-nanosecond response times at terahertz frequencies

et al. 2020

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“…The main drawback of this approach is the fact that the maximum working frequency of GFETs is strongly conditioned by their maximum oscillation frequency f max ≈ 40 GHz, limiting their use as active devices to the microwave band. Nevertheless, the use of GFET to implement subharmonic mixers [32]- [35] and signal detectors [36], [37] working in the submillimeter wave band has also been described. In this case, resistive mixer implementations are usually used to overcome the f max limitation, showing that they are able to downconvert RF signals at frequencies up to f RF = 400 GHz.…”

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confidence: 99%

330-500 GHz Graphene-Based Single-Stage High-Order Subharmonic Mixer

et al. 2019

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In this work, a graphene-based single-stage high-order subharmonic mixer is presented. The device is able to up-and downconvert a signal in the 330-500 GHz frequency range, using a local oscillator signal with frequency located in the 26-40 GHz band. It exploits the strong nonlinear electromagnetic behavior exhibited by macroscopic graphene sheets when they are exposed to an incident electromagnetic wave to generate the output signal as a mixing product between the input signal and a high-order harmonic component of the local oscillator, which is internally generated without requiring additional circuitry. A prototype was implemented and its performance was experimentally characterized considering several different local oscillator multiplication orders. The maximum measured downconversion gain is around −50 dB, whereas the maximum output signal reached when working as upconverter is −43 dBm at 340 GHz and −63 dBm at 480 GHz. These values are good enough to be used in practical short-range applications. Furthermore, the measurement results are in good agreement with the theoretical predictions about graphene behavior.

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“…9 The graphene field effect transistor ("GFET") configuration dominated the gradual development of graphene mixers through the GHz to hundreds of GHz frequency range. 5,[10][11][12][13][14][15][16] At low frequencies, GFET mixers and multipliers still cannot compete with the dominant CMOS and other semiconductor technologies.…”

Section: Manuscript Textmentioning

confidence: 99%

Asymmetric Two-Terminal Graphene Detector for Broadband Radiofrequency Heterodyne- and Self-Mixing

et al. 2018

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Graphene, a single atomic layer of covalently bonded carbon atoms, has been investigated intensively for optoelectronics and represents a promising candidate for high-speed electronics. Here, we present a microwave mixer constructed as an asymmetrically contacted two-terminal graphene device based on the thermoelectric effect. We report a 50 GHz (minimum) mixer bandwidth as well as 130 V/W (163 mA/W) extrinsic direct-detection responsivity. Anomalous second-harmonic generation due to self-mixing in our graphene detector is also observed. Careful investigation of the responsivity from four different approaches gives consistent results, confirming the exceptional performance of our zero-bias device operating at room temperature. The 50 GHz bandwidth indicates an extremely fast response time and our experimental results represent an encouraging advance toward practical graphene microwave devices with anticipated future applications extended through millimeter wave and terahertz frequencies.

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A heterodyne graphene FET detector at 400 GHz

Cited by 7 publications

References 10 publications

Thermoelectric graphene photodetectors with sub-nanosecond response times at terahertz frequencies

Thermoelectric graphene photodetectors with sub-nanosecond response times at terahertz frequencies

330-500 GHz Graphene-Based Single-Stage High-Order Subharmonic Mixer

Asymmetric Two-Terminal Graphene Detector for Broadband Radiofrequency Heterodyne- and Self-Mixing

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