Thermoelectric graphene photodetectors with sub-nanosecond response times at terahertz frequencies

Viti, Leonardo; Cadore, Alisson R.; Yang, Xinxin; Vorobiev, Andrei; Muench, Jakob E.; Watanabe, Kenji; Taniguchi, Takashi; Stake, Jan; Ferrari, Andrea C.; Vitiello, Miriam S.

doi:10.1515/nanoph-2020-0255

Cited by 47 publications

(42 citation statements)

References 59 publications

(130 reference statements)

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“…Despite the fact that our model successfully describes all the features of the observed photoresponse, it does not account for a possible thermoelectric contribution to the responsivity of TFET detectors 5 , 10 . Assuming that the Seebeck coefficient varies between S cont in the single-gated region near the source contact and S ch in the double-gated channel, one can estimate the thermoelectric contribution as 52 R TE ≈ (3 e /2 π 2 k B )( S cont − S ch )( e ∣ Z a ∣/ k B T )( δ L / L ), where δ L is the length of single-gated region and L is the full channel length.…”

Section: Discussionmentioning

confidence: 95%

“…Field effect transistors (FETs) have recently found an unexpected application for the rectification of THz and sub-THz signals beyond their cutoff frequency 1 , 2 . This technology paves the way for on-chip 3 , low-noise 4 , and sub-nanosecond radiation detection 5 , 6 enabling ≳10 Gb/s data transfer rates. Contrary to competing diode rectifiers, FETs offer the possibility of phase-sensitive detection 7 , 8 vital for noise-immune communications with phase modulated signals.…”

Section: Introductionmentioning

confidence: 99%

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Tunnel field-effect transistors for sensitive terahertz detection

Gayduchenko

Alymov

et al. 2021

Nat Commun

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The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG’s electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/$$\sqrt{{\rm{Hz}}}$$ Hz ) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors’ responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor.

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Section: Discussionmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

Tunnel field-effect transistors for sensitive terahertz detection

Gayduchenko

Alymov

et al. 2021

Nat Commun

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“…The advent of two-dimensional (2D) materials had a ground-breaking impact on science and technology, 1 − 13 due to their peculiar properties with high application capabilities in different fields, such as energy storage, 14 − 22 catalysis, 23 − 27 optoelectronic devices, 28 − 31 and gas sensing. 32 − 34 A key point for the technological exploitation of 2D materials is represented by their large-scale production, which still remains challenging.…”

Section: Introductionmentioning

confidence: 99%

Sustainable Liquid-Phase Exfoliation of Layered Materials with Nontoxic Polarclean Solvent

Paolucci

D’Olimpio

Lozzi

et al. 2020

ACS Sustainable Chem. Eng.

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Liquid-phase exfoliation is the most suitable platform for large-scale production of two-dimensional materials. One of the main open challenges is related to the quest of green and bioderived solvents to replace state-of-the-art dispersion media, which suffer several toxicity issues. Here, we demonstrate the suitability of methyl-5-(dimethylamino)-2-methyl-5-oxopentanoate (Rhodiasolv Polarclean) for sonication-assisted liquid-phase exfoliation of layered materials for the case-study examples of WS 2 , MoS 2 , and graphene. We performed a direct comparison, in the same processing conditions, with liquid-phase exfoliation using N -methyl-2-pyrrolidone (NMP) solvent. The amount of few-layer flakes (with thickness <5 nm) obtained with Polarclean is increased by ∼350% with respect to the case of liquid-phase exfoliation using NMP, maintaining comparable values of the average lateral size, which even reaches ∼10 μm for the case of graphene produced by exfoliation in Polarclean, and of the yield (∼40%). Correspondingly, the density of defects is reduced by 1 order of magnitude by Polarclean-assisted exfoliation, as evidenced by the I (D)/ I (G) ratio in Raman spectra of graphene as low as 0.07 ± 0.01. Considering the various advantages of Polarclean over state-of-the-art solvents, including the absence of toxicity and its biodegradability, the validation of superior performances of Polarclean in liquid-phase exfoliation paves the way for sustainable large-scale production of nanosheets of layered materials and for extending their use in application fields to date inhibited by toxicity of solvents (e.g., agri-food industry and desalination), with a subsequent superb impact on the commercial potential of their technological applications.

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“…Prechtel et al [ 24 ] reported that built‐in electric fields give rise to a photocurrent to 4 ps and that the photothermoelectric effect generates a current with a decay time to 130 ps at the G‐metal interface by the time‐resolved picosecond photocurrents measurement techniques. Viti et al [ 25 ] report room‐temperature THz nanoreceivers exploiting antenna‐coupled G FET, operating with a combination of high response time (hundreds of ps) and high sensitivity (NEP below 120 pW Hz −1–2 at 3.4 THz).…”

Section: D Materials For Ir Detectionmentioning

confidence: 99%

2D Material‐Based Photodetectors for Infrared Imaging

2021

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As a dynamic research field, infrared (IR) detection and imaging presents broad prospect in spectra‐chemistry, biomedicine, and artificial intelligence. Due to the excellent properties, 2D materials are expected to overcome the serious manufacturing cost and integration problems of Si‐based photodetectors, providing opportunities for the universal application of IR imaging. Up to now, dozens of 2D materials are used to manufacture IR photodetectors. The ultrathin and flexible 2D material‐based optoelectronic devices, which are easy to machine and integrate, will demonstrate the application beyond imagination. In this review, first, the principle of IR detection and imaging is introduced, in which the single pixel and array imaging are discussed. Then the promising materials, toward broadband detection and special detection, are introduced in brief and the devices for imaging are summarized, including the mode based on light intensity and the strategy originated from polarization. Finally, it is prospected that the 2D materials have the capability to show the integral IR world, which contains large amount of valuable information such as molecular vibration spectra and significant applications such as artificial retina.

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Thermoelectric graphene photodetectors with sub-nanosecond response times at terahertz frequencies

Cited by 47 publications

References 59 publications

Tunnel field-effect transistors for sensitive terahertz detection

Tunnel field-effect transistors for sensitive terahertz detection

Sustainable Liquid-Phase Exfoliation of Layered Materials with Nontoxic Polarclean Solvent

2D Material‐Based Photodetectors for Infrared Imaging

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