A graphene integrated highly transparent resistive switching memory device

Dugu, Sita; Pavunny, Shojan P.; Limbu, Tej B.; Weiner, Brad R.; Morell, Gerardo; Katiyar, Ram S.

doi:10.1063/1.5021099

Cited by 29 publications

(19 citation statements)

References 55 publications

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“…[ 87 ] However, due to the high conductivity of graphene, the low switching ratio is a big challenge. Some works adopt hybrid active structures, for example, graphene sandwiched between two polymers, (e.g., polymethylmethacrylate (PMMA)/graphene/PMMA [ 88 ] and polyvinylidene fluoride (PVDF)/graphene/PVDF [ 89 ] ), or a multilayer structure (e.g., CuO/graphene [ 90 ] and Al 2 O 3 /graphene [ 91 ] ). Another drawback of graphene is that it is typically prepared by a complicated process.…”

Section: Rs Device and Performance Improvementmentioning

confidence: 99%

A Review of Resistive Switching Devices: Performance Improvement, Characterization, and Applications

et al. 2021

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As human society enters the big data era, huge data storage and energy‐efficient data processing are in great demand. The resistive switching device is an emerging device with both inherent memory and computation capabilities. It may bring disruptive influences to modern information technology from bottom up. After decades of study of the materials, mechanisms, and devices, the maturity of the resistive switching device in various applications, for example, nonvolatile memory, artificial neural networks, and information security, could be foreseen. Herein, the recent progress of the resistive switching device from the aspects of materials, devices, and applications is reviewed. First, the resistive switching device, including mechanisms and materials, is briefly discussed. Performance improvement methods with respect to individual device properties are systematically illustrated. Second, characterization technologies for understanding the mechanism and guidance of device design are classified and discussed in depth. Third, various applications based on resistive switching devices are summarized. The review ends with a brief conclusion concerning the challenges from mechanism to algorithm level and the future outlook.

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Section: Rs Device and Performance Improvementmentioning

confidence: 99%

A Review of Resistive Switching Devices: Performance Improvement, Characterization, and Applications

et al. 2021

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“…Wafer scale growth processes with sufficient purity and sufficiently low defect densities need to be developed before we will be able to take advantage of the promise of 2D materials in semiconductor devices. 67,68 The recent discovery that relatively thin films of doped hafnium oxide can be made ferroelectric under the right conditions has created new interest in the possibilities for ferroelectrics. 69 Because hafnium oxide is so well known to integrators, and because it is possible to make ferroelectric films that are 5 nm or thinner with doped hafnium oxide, integrators are racing to see how logic and memory devices incorporating these films perform.…”

Section: -10mentioning

confidence: 99%

Perspective: New process technologies required for future devices and scaling

Clark¹,

Tapily²,

Yu³

et al. 2018

APL Materials

143

179

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This paper presents an overview and perspective on processing technologies required for continued scaling of leading edge and emerging semiconductor devices. We introduce the main drivers and trends affecting future semiconductor device scaling and provide examples of emerging devices and architectures that may be implemented within the next 10-20 yr. We summarize multiple active areas of research to explain how future thin film deposition, etch, and patterning technologies can enable 3D (vertical) power, performance, area, and cost scaling. Emerging and new process technologies will be required to enable improved contacts, scaled and future devices and interconnects, monolithic 3D integration, and new computing architectures. These process technologies are explained and discussed with a focus on opportunities for continued improvement and innovation.

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“…The ZnO/rGO hybrid has exhibited excellent electro-catalytic behaviour for the oxygen reduction reaction used in fuel cells and renewable energy technology [213], [215]. Graphene has been employed along-side other materials in creating a highly transparent and flexible RRAM device [217], [218] with a transmittance of more than 82 % in the visible field. Therefore, rGO can store oxygen that is needed for the switching of RRAM devices.…”

Section: E Hybrid Layer and Its Significance In Zno Based Rrammentioning

confidence: 99%

“…22(e) and (f) has the most stable switching curve. However, inserting a capping layer of rGO in the structure between the ZnO and electrodes may enhance the overall switching characteristics due to the oxygen storage reservoir nature of the rGO layer [215], [218], [221]. Still, more investigations are needed to elucidate the influence of GO capping layer properties on the ZnO switching characteristics under the various bottom and top electrodes.…”

Section: E Hybrid Layer and Its Significance In Zno Based Rrammentioning

confidence: 99%

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

et al. 2021

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Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed. The use of doping elements, multi-layered structures, suitable bottom and top electrodes, controlling the deposition materials, and the impact of hybrid structure for enhancing the switching dynamics are discussed. The potentials of ZnO-based RRAM for invisible and bendable devices are also covered. ZnO-based RRAM has the potential for possible application in bio-inspired cognitive computational systems. Thus, the synapse capability of ZnO is presented. The sneak-path current issue also besets ZnO-based RRAM crossbar array architecture. Hence, various attempts to subdue the bottleneck have been shown and discussed in this article. Interestingly, ZnO provides not only helpful memory features. However, it demonstrates the ability to be used in nonvolatile multifunctional memory devices. Also, this review covers various issues like the effect of electrodes, interfacial layers, proper switching layers, appropriate fabrication techniques, and proper annealing settings. These may offer a valuable understanding of the study and development of ZnO-based RRAM and should be an avenue for overcoming RRAM challenges.

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A graphene integrated highly transparent resistive switching memory device

Cited by 29 publications

References 55 publications

A Review of Resistive Switching Devices: Performance Improvement, Characterization, and Applications

A Review of Resistive Switching Devices: Performance Improvement, Characterization, and Applications

Perspective: New process technologies required for future devices and scaling

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

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