2009
DOI: 10.1109/jmems.2009.2020467
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A General Methodology to Predict the Reliability of Single-Crystal Silicon MEMS Devices

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Cited by 25 publications
(22 citation statements)
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“…An on-chip test structure was developed by [120,121] for the fatigue analysis; the experimental arrangements contained an electrostatically driven actuator, sensor, movable mass (responsible of delivering force to the notched beam), and a notched beam. It was demonstrated that large stress reduces the fatigue life cycle.…”
Section: Effects Of Humidity and Temperature On The Reliability Of Memsmentioning
confidence: 99%
“…An on-chip test structure was developed by [120,121] for the fatigue analysis; the experimental arrangements contained an electrostatically driven actuator, sensor, movable mass (responsible of delivering force to the notched beam), and a notched beam. It was demonstrated that large stress reduces the fatigue life cycle.…”
Section: Effects Of Humidity and Temperature On The Reliability Of Memsmentioning
confidence: 99%
“…Ritchie et al [13] examined the premature fatigue failure of siliconbased micron-scale structures for MEMS, and the fracture properties of mineralized tissue, specifically human bone. Fitzgerald et al [14] described and validated a general methodology to predict the reliability of single-crystal silicon MEMS devices. This methodology used experimental data generated from fracture testing specimens combined with finite element modeling to predict the fracture probability for any MEMS device under any loading.…”
Section: Previous Efforts On Mems Reliabilitymentioning
confidence: 99%
“…In contrast J.-L Le and R. Ballarini to voltage-compensated accelerometers such as those developed by Analog Devices do not operate near the strain limits, some devices are designed to operate at high mechanical power densities and/or large deformation levels, in which the applied stress and strain could reach the strength and strain limits [26]. Therefore, there has been a continuing interest in understanding the reliability of MEMS materials and structures [1,20,22,26,36].…”
Section: Introductionmentioning
confidence: 99%
“…In a notched specimen on the other hand the largest flaw may experience much lower values of stress, or alternatively the region of highest stress may contain relatively small flaws. It is nearly impossible to eliminate processing-induced defects in MEMS devices, which leads to the observed variability of fracture strength of MEMS devices [20,22].…”
Section: Introductionmentioning
confidence: 99%
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