A G-Band on-off-Keying Low-Power Transmitter and Receiver for Interconnect Systems in 65-nm CMOS

Wang, Yunshan; Yu, Bo; Ye, Yu; Chen, Chun-Nien; Gu, Qun Jane; Wang, Huei

doi:10.1109/tthz.2019.2957460

Cited by 10 publications

(4 citation statements)

References 43 publications

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“…For a 2D array with 15 elements in each dimension, the beamwidth is approximately 7 • . Such a small beamwidth intro- [42] [46] Frequency (GHz) Output Power (dBm) Figure 3. Output power against frequency of transceiver systems in the literature.…”

Section: Design Considerations Of Thz Integrated Phased Arraysmentioning

confidence: 99%

A review on applications of integrated terahertz systems

Venkatesh

Saeidi

2021

China Commun.

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A review on Terahertz end-to-end systems with an emphasis on integrated approaches is presented. Four major catalogs of THz integrated systems, including THz communication systems, THz imaging systems, THz radars, and THz spectroscopy systems, are reviewed in this article. The performance of integrated systems is compared with non-integrated solutions, followed by a discussion on the trend in future research avenues and applications.

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Section: Design Considerations Of Thz Integrated Phased Arraysmentioning

confidence: 99%

A review on applications of integrated terahertz systems

Venkatesh

Saeidi

2021

China Commun.

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“…In 2020, Yunshan Wang et al proposed a terahertz traveling-wave type switch transceiver using 65 nm CMOS technology [29]. A lossless shunt capacitor was used as a parallel MOSs' equivalent circuit in a traveling wave switch.…”

Section: Parallel-switch Thz Direct Modulationmentioning

confidence: 99%

“…A lossless shunt capacitor was used as a parallel MOSs' equivalent circuit in a traveling wave switch. The design referred to a topology that could effectively improve the isolation with fewer transistors, and by folding the transmission line, par- [25] 120 GHz 9 Gbps 65 nm-CMOS 2015 [26] 300 GHz 20 Gbps 80-nm-gate InP HEMT 2017 [27] 0.22-0.325 THz 14 GHz GaAs 2019 [28] 90-170 GHz -800-nm InP DHBT 2020 [29] 208 GHz 7 Gbps 65-nm bulk CMOS Note: In the band field, a single frequency does not represent that the device only works at a specific single frequency point.…”

Section: Parallel-switch Thz Direct Modulationmentioning

confidence: 99%

Terahertz direct modulation techniques for high-speed communication systems

Zhou

Zhang

et al. 2021

China Commun.

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Terahertz communication technology can provide abundant frequency resources, strong confidentiality, antijamming capability, communication tracking capability and the ability to achieve highspeed data transmissions and can serve as an important technical method for high-speed communications in the future. Among these terahertz communication technologies, terahertz direct modulation technology is a key means to achieve low system complexity and power consumption. In this paper, a review and outlook of terahertz direct modulation technology are proposed from the aspects of high-electron-mobilitytransistor-based terahertz direct modulation, parallelswitch terahertz direct modulation, diode-based terahertz direct modulation, quantum cascade laser-based terahertz direct modulation and new-material-based terahertz direct modulation. We hope through this paper that more readers can gain knowledge about the development and challenges of terahertz direct modulation technology for high-speed communication systems, thus promoting the development of high-speed terahertz communication technology based on direct modulation.

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“…As the cut-off frequency (f T ) and the maximum frequency of oscillation (f max ) of the silicon-based transistors continue to improve, silicon-based technologies are seriously considered suitable for designing fully integrated sub-THz transceivers that can significantly reduce cost, effort, and time to market. Recent demonstrations of sub-terahertz technology have included complete transceivers for communication links [8][9][10][11][12][13][14][15], single transmitters [16,17], and receiver designs [18][19][20][21]. Using push-pull subharmonic mixer architecture, a 300 GHz CMOS transceiver could reach 34 Gb/s of data transmissions [8].…”

Section: Introductionmentioning

confidence: 99%

A 280 GHz 30 GHz Bandwidth Cascaded Amplifier Using Flexible Interstage Matching Strategy in 130 nm SiGe Technology

2022

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This paper presents a 280 GHz amplifier design strategy for a robust multistage amplifier in a sub-Terahertz (sub-THz) regime in 130 nm SiGe technology. The presented 280 GHz amplifier consists of 14 stages of the cascaded common emitter (CE) amplifier which offers a compact and improved-noise design due to the absence of the area-expensive and lossy baluns at such high frequencies. The interstage-matching network was flexibly constructed with two separate resonant tanks using metal–insulator–metal (MIM) capacitors and microstrip transmission lines (MSTLs) between each stage. The measured amplifier achieved a peak power gain of 10.9 dB at 283 GHz and a 3 dB gain of bandwidth of 30 GHz between 270 and 300 GHz. The peak output power of the amplifier was 0.8 dBm with an output of 1 dB gain compression point (OP1dB) of -3.6 dBm in simulation. The 14-stage amplifier consumes an area of 0.213 mm2, including all the pads. With the proposed interstage matching approach, a well-balanced 280 GHz amplifier has been demonstrated. The proposed design strategy is widely applicable to sub-THz receivers for future wireless communication systems.

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A G-Band on-off-Keying Low-Power Transmitter and Receiver for Interconnect Systems in 65-nm CMOS

Cited by 10 publications

References 43 publications

A review on applications of integrated terahertz systems

A review on applications of integrated terahertz systems

Terahertz direct modulation techniques for high-speed communication systems

A 280 GHz 30 GHz Bandwidth Cascaded Amplifier Using Flexible Interstage Matching Strategy in 130 nm SiGe Technology

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