A Fully Integrated Ultra-Low Insertion Loss T/R Switch for 802.11b/g/n Application in 90 nm CMOS Process

Kidwai, A.A.; Fu, Chang-Tsung; Jensen, J.F.; Taylor, S.S.

doi:10.1109/jssc.2009.2015813

Cited by 41 publications

(14 citation statements)

References 8 publications

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“…By using the Pwell node for tuning better than 20dB isolation is achieved in the 50-70 GHz range. In order to reduce switch loss a distant Psub connection can be used as in [7] without a DNW device. With this device the isolation from the substrate is poorer and may increase coupling in a single ended design.…”

Section: A New Switch With Deep Nwell (Dnw) Floatmentioning

confidence: 99%

Design consideration of a 5 stage bidirectional single ended LNA PA in 60GHz

Cohen

Ravid

Ritter

2011

2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2011)

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This paper presents a 60GHz LNA and PAs connected together with input and output switches to create a bidirectional amplifier to be used as a front end block in a 60GHz phased array. The LNA and PA are targeted for low power operation consuming 12mA and 17mA accordingly from 1.3V supply with 23dB gain 7dB NF and 7dBm Psat including all the input and output switches and 0.14mm 2 chip size. This state of the art performance with compact size is achieved by 5 single ended stages. Special design technique and considerations were used to lower the switching loss and to combat feedbacks at this high gain and frequency.

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Section: A New Switch With Deep Nwell (Dnw) Floatmentioning

confidence: 99%

Design consideration of a 5 stage bidirectional single ended LNA PA in 60GHz

Cohen

Ravid

Ritter

2011

2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2011)

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“…Realizing TRMs in standard CMOS technology offers many advantages, but is still a challenging task, especially in achieving low-loss switches with MOS. Much effort has been made to improve the performance of CMOS switches by minimizing or maximizing the substrate resistance [23,24,25] and by using the body-floating approach [26,27]. …”

Section: Introductionmentioning

confidence: 99%

An X-band Bi-Directional Transmit/Receive Module for a Phased Array System in 65-nm CMOS

Nguyen

Nam

Choe

et al. 2018

Sensors

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We present an X-band bi-directional transmit/receive module (TRM) for a phased array system utilized in radar-based sensor systems. The proposed module, comprising a 6-bit phase shifter, a 6-bit digital step attenuator, and bi-directional gain amplifiers, is fabricated using 65-nm CMOS technology. By constructing passive networks in the phase-shifter and the variable attenuator, the implemented TRM provides amplitude and phase control with 360° phase coverage and 5.625° as the minimum step size while the attenuation range varies from 0 to 31.5 dB with a step size of 0.5 dB. The fabricated T/R module in all of the phase shift states had RMS phase errors of less than 4° and an RMS amplitude error of less than 0.93 dB at 9–11 GHz. The output 1dB gain compression point (OP1dB) of the chip was 5.13 dBm at 10 GHz. The circuit occupies 3.92 × 2.44 mm2 of the chip area and consumes 170 mW of DC power.

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“…Inductorless LNA designs have been studied to make use of the excess f T in advanced CMOS technologies to lower cost [1]. However, an inductively tuned LNA has the advantage of improved out-of-band rejection, and can be readily integrated with a transmit/receive (T/R) switch to provide isolation in the TX mode without the need for additional inductors [2]. In this paper, a 2.5GHz fully differential tuned LNA with integrated T/R switch is designed in a High-K metal gate 32nm digital CMOS process, and packaged in an SoC-compatible flip-chip package.…”

mentioning

confidence: 99%

“…Simulation indicates a >32dB isolation from the input pad to the LNA gate in the TX mode. The TX switch is implemented using an n transistor with remote body contact so that the drain and the bulk voltages track to prevent breakdown [2]. The minimumchannel-length device without deep NWell is used to minimize insertion loss and maximize linearity.…”

mentioning

confidence: 99%

A 2.5GHz 32nm 0.35mm<sup>2</sup> 3.5dB NF −5dBm P<inf>1dB</inf> fully differential CMOS push-pull LNA with integrated 34dBm T/R switch and ESD protection

Lakdawala

Taylor

et al. 2011

2011 IEEE International Solid-State Circuits Conference

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Intel, Hillsboro, ORProcess scaling enables SoC integration of radio and large digital systems at reduced cost and area. Furthermore, the crowded spectrum requires high linearity receivers to enable co-existence in the 2.4GHz ISM band. Inductorless LNA designs have been studied to make use of the excess f T in advanced CMOS technologies to lower cost [1]. However, an inductively tuned LNA has the advantage of improved out-of-band rejection, and can be readily integrated with a transmit/receive (T/R) switch to provide isolation in the TX mode without the need for additional inductors [2]. In this paper, a 2.5GHz fully differential tuned LNA with integrated T/R switch is designed in a High-K metal gate 32nm digital CMOS process, and packaged in an SoC-compatible flip-chip package. Reliability constraints of the package severely limit the ability to depopulate soldering bumps, and RF components must be designed taking the bump location into account. The LNA achieves a 3.5dB NF, -5dBm P 1dB at 2.5GHz while drawing 11mA from a 1.8V supply. LNA performance is enabled by (1) use of a push-pull topology that exploits the equal strength of p and n transistors to improve linearity, (2) use of nested coupled inductors (NCI) for low-noise input matching and to reduce area. The T/R switch handles 34dBm of power with an insertion loss of 1.1dB at 2.5GHz. T/R switch performance is enabled by (1) reuse of LNA gate inductor to enable low RX mode loss [2], (2) use of remote body-contacted TX switch with high power handling and ESD protection for a transformercoupled PA. Figure 3.3.1 shows the block diagram of the LNA and integrated T/R switch.The TX switch consists of a minimum gate length NMOS transistor with a remote body contact. The RX switch is combined with the input matching network of the LNA and contributes negligible loss to the RX NF. The RF I/O has 50ohm differential impedance, which is transformed to single-ended 50ohm using an off-chip balun. Figure 3.3.2 illustrates the combination of PMOS and NMOS sourceinductive-degenerated LNA stacked to create the push-pull LNA. The similar performance of the p and n transistors in the 32nm hi-K metal gate process [3] improves the push-pull LNA to achieve a good NF, and allows for similar-valued source-degeneration inductors, which is important for area reduction. The pushpull topology improves the linearity by combining the complementary response of the gm non-linearity for the p and n transistors to obtain a constant transconductance with changes in input voltage [4]. Additionally, the effective AC gain to the p and n gates from the input, and the design among cascode transistors and load resistance affect the linearity. The schematic of the fully differential LNA with the Rx switch is illustrated in Fig. 3.3.3. Bias of the p and n transistors is generated by a replica bias circuit and is optimized for maximum linearity. The gate voltage is chosen to maximize output swing while maintaining sufficient f T . Thin-gate devices with the minimum channel length are chosen to maximum...

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A Fully Integrated Ultra-Low Insertion Loss T/R Switch for 802.11b/g/n Application in 90 nm CMOS Process

Cited by 41 publications

References 8 publications

Design consideration of a 5 stage bidirectional single ended LNA PA in 60GHz

Design consideration of a 5 stage bidirectional single ended LNA PA in 60GHz

An X-band Bi-Directional Transmit/Receive Module for a Phased Array System in 65-nm CMOS

A 2.5GHz 32nm 0.35mm<sup>2</sup> 3.5dB NF −5dBm P<inf>1dB</inf> fully differential CMOS push-pull LNA with integrated 34dBm T/R switch and ESD protection

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A Fully Integrated Ultra-Low Insertion Loss T/R Switch for 802.11b/g/n Application in 90 nm CMOS Process

Cited by 41 publications

References 8 publications

Design consideration of a 5 stage bidirectional single ended LNA PA in 60GHz

Design consideration of a 5 stage bidirectional single ended LNA PA in 60GHz

An X-band Bi-Directional Transmit/Receive Module for a Phased Array System in 65-nm CMOS

A 2.5GHz 32nm 0.35mm<sup>2</sup> 3.5dB NF &#x2212;5dBm P<inf>1dB</inf> fully differential CMOS push-pull LNA with integrated 34dBm T/R switch and ESD protection

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A 2.5GHz 32nm 0.35mm<sup>2</sup> 3.5dB NF −5dBm P<inf>1dB</inf> fully differential CMOS push-pull LNA with integrated 34dBm T/R switch and ESD protection