A Frequency-Selective Broadband Low-Noise Amplifier With Double-Loop Transformer Feedback

Bagga, S.; Mansano, Andre L.; Serdijn, Wouter A.; Long, John R.; Hartingsveldt, Koen van; Philips, Kathleen

doi:10.1109/tcsi.2013.2295010

Cited by 26 publications

(13 citation statements)

References 11 publications

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“…Based on available articles, WB LNTA was another proposed wideband structure in the 2010s that usually had power dissipation problem [252, 276, 287, 297, 335, 339], compared to the optimum UWB LNAs in Table 3. Studying [161–200, 201–250, 251–300, 301–361] shows that the LNTA idea for wideband applications was not welcomed in the 2010s by engineers; infact, most of the works focussed on WB/UWB LNAs. But note that this issue does not mean that LNTA is a useless idea.…”

Section: Discussionmentioning

confidence: 99%

“…In the 2010s, MOSFET scaling reached 5 nm from 32 nm [30] and many studies [161–200, 201–250, 251–300, 301–361] were carried out by focussing on improving the mentioned topologies and techniques which were presented in the 2000s for wideband LNA. As examples, we can refer to ‘the noise/distortion cancelation topologies’ [164, 167, 173, 181, 189, 192, 194, 195, 201, …”

Section: Uwb Lnamentioning

confidence: 99%

“…Considering the works of 2010s, [161–200, 201–250, 251–300, 301–361] it seems that optimum ultrawideband designs in the BiCMOS, the CMOS and the HEMT technologies are allocated to [305, 337, 345], respectively. In 2017, Ch.…”

Section: Uwb Lnamentioning

confidence: 99%

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Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

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To the best of the author's knowledge, several studies during 1960-2019 were carried out on wideband and ultrawideband LNAs just to render optimum LNAs for SAW-less Radio-Frequency Integrated Circuits (RFICs) but none of these works reviewed and taught the proceedings of these six decades, hence the lack of a comprehensive review is quite noticeable. This article specifically studies the challenges and solutions of designing UWB LNA by reviewing topologies and techniques such as inductive peaking, noise and distortion cancellation, g m -boosting, active inductor and notch filter. Its historical aspect illustrates when the idea of wideband LNA was born and how it changed to ultrawideband LNA, and its tutorial aspect discusses circuits and achievements to present optimum LNAs in Complementary MOS (CMOS), BiCMOS and High-Electron-Mobility Transistor (HEMT) technologies. This work describes the endeavours of engineers in reaching UWB LNA from narrowband LNA during six decades that have great importance as a chapter in understanding this topic because it teaches all topologies, techniques, circuits and related events in a historical narrative for trained readers who are not experts on this topic. | UWB LNA | In the 1960sWhere did the idea of 'transistorised wideband LNA' originate from? It seems that everything goes back to the 1960s when This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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Section: Discussionmentioning

confidence: 99%

Section: Uwb Lnamentioning

confidence: 99%

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Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

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“…Various feedback techniques were investigated for wideband LNA designs: (1) negative feedback, (2) active feedback [64,78], (3) resistive feedback [79,80] and (4) reactive feedback (with magnetic coupling between the input MOSFET's gate and source through transformers) [81] can also achieve wideband operation. However, these techniques are not suitable for mmWave LNAs due to parasitics.…”

Section: Wideband Lna Designmentioning

confidence: 99%

Cmos Low Noise Amplifier Design for Microwave and Mmwave Applications (Invited Review)

Li¹,

Zhang²

2018

PIER

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This paper reviews recent advances in the design of low noise amplifier (LNA) in complementary metal oxide semiconductor (CMOS) technology for radio transceivers at microwave and millimeter wave (mmWave) frequencies. First, the evolution of wireless communication systems and CMOS technology are briefly revisited to highlight the requirements of an LNA design. Then, key performance parameters and device circuit models are described. Next, we discuss typical LNA topologies, followed by those important design techniques, algorithms and concepts developed specifically for CMOS LNAs. Moreover, reported CMOS LNA designs are summarized, and future design issues are identified. Finally, we conclude the paper and briefly outline our future work on CMOS LNA designs.

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“…For instance, the empirical device models (EDMs) simulate the external characteristics of devices with equivalent circuits [2]. In addition, accurate modelling is required to predict the linear and nonlinear behaviour of the device and microwave circuit design such as in low noise amplifiers (LNAs) as well as current for the broadband signals [3][4][5][6]. By cutting the iteration number of fabrication for device characterization, device modelling reduces the time and cost required for developing a specific device or circuit [7].…”

Section: Introductionmentioning

confidence: 99%

Optimization of Empirical Modelling of Advanced Highly Strained In0.7Ga0.3As/In0.52Al0.48As pHEMTs for Low Noise Amplifier

Jubadi¹,

Packeer²,

Missous³

2017

IJECE

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<span>An optimized empirical modelling for a 0.25µm gate length of highly strained channel of an InP-based pseudomorphic high electron mobility transistor (pHEMT) using InGaAs–InAlAs material systems is presented. An accurate procedure for extraction is described and tested using the pHEMT measured dataset of I-V characteristics and related multi-bias s-parameters over 20GHz frequency range. The extraction of linear and nonlinear parameters from the small signal and large signal pHEMT equivalent model are performed in ADS. The optimized DC and S-parameter model for the pHEMT device provides a basis for active device selection in the MMIC low noise amplifier circuit designs.</span>

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A Frequency-Selective Broadband Low-Noise Amplifier With Double-Loop Transformer Feedback

Cited by 26 publications

References 11 publications

Ultrawideband LNA 1960–2019: Review

Ultrawideband LNA 1960–2019: Review

Cmos Low Noise Amplifier Design for Microwave and Mmwave Applications (Invited Review)

Optimization of Empirical Modelling of Advanced Highly Strained In0.7Ga0.3As/In0.52Al0.48As pHEMTs for Low Noise Amplifier

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