A frequency doubler with high conversion gain and good fundamental suppression

Gruson, F.; Bergmann, G.; Schumacher, Hermann

doi:10.1109/mwsym.2004.1335836

Cited by 17 publications

(7 citation statements)

References 6 publications

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“…Compared to other types of frequency multipliers, this approach requires much less input drive for saturated conversion gain. On the other hand, Gilbert cell based multipliers suffer from strong DC offset at the output, which may cause unbalanced phase and amplitude operation [9]. However, this drawback can be overcome by adding an additional differential amplifier providing sufficient common mode suppression.…”

Section: Circuit Design and Performancementioning

confidence: 99%

Wideband 110 GHz frequency quadrupler for an FMCW imager in 0.13-μm SiGe:C BiCMOS process

Valenta¹,

Ulusoy²,

Trasser³

et al. 2013

2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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A high-performance 110 GHz frequency quadrupler implemented in 0.13-μm BiCMOS process is presented. The designed circuit is to be employed in an FMCW imaging radar system and is based on a cascade of two Gilbert cells with tuned loads connected as squarers. The differential input signal that is used for validation of the realized quadrupler is generated using an active on-chip balun with a limiting differential amplifier. Measurement results of the circuit prove that this approach to mm-wave frequency generation can provide operation with up to 25 GHz bandwidth along with high output power of 0 dBm.

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Section: Circuit Design and Performancementioning

confidence: 99%

Wideband 110 GHz frequency quadrupler for an FMCW imager in 0.13-μm SiGe:C BiCMOS process

Valenta¹,

Ulusoy²,

Trasser³

et al. 2013

2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Self Cite

View full text Add to dashboard Cite

show abstract

“…Compared to other types of frequency multipliers, this approach requires much less input drive for saturated conversion gain. On the other hand, Gilbert cell based multipliers suffer from a strong DC offset at the output, which may cause unbalanced phase and amplitude operation [12], leading to undesired effects such as a drop of the output power or a shift of the radiation pattern of differentially fed antennas. In this work, the latter drawback has been overcome by adding an additional differential cascode PA designed to boost the common mode suppression.…”

Section: Architecture Of the F-band Multipliermentioning

confidence: 99%

F-band frequency octupler in 0.13-μm SiGe:C BiCMOS with 2 mW output power

Valenta

Yuan

Trasser

et al. 2013

2013 IEEE MTT-S International Microwave Symposium Digest (MTT)

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This paper presents design, implementation and measurement results of a high performance F-band frequency octupler (multiplier by eight) implemented in a 0.13-ȝm SiGe:C BiCMOS process. The multiplier cascades three Gilbert squarers with tuned loads. The realized chip incorporates an active balun together with a Limiting Amplifier (LA) at the input of the multiplier and a 140 GHz differential Power Amplifier (PA) designed to improve output balance. Full operational bandwidth of 20 GHz and maximum output power of 3 dBm is achieved for input power as low as -23 dBm while consuming 178 mW of DC power. The output power can be adjusted from -5 to 3 dBm. Suppression of undesired harmonic tones within the covered band is also adjustable and can be better than 25 dB. To the best of authors' knowledge, this is the first demonstration of this approach applied in this frequency range.Index Terms -Bipolar analog integrated circuits, Multiplying circuits, Millimeter wave devices.

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“…A Gilbert cell mixer as a frequency doubler requires much less input drive for saturated gain in comparison to other types of frequency multipliers. On the other hand, it suffers from a strong DC offset at the output, which causes unbalanced operation [13]. For the purpose of carrier recovery, the frequency quadrupler was optimized for an input frequency of 5 GHz and an output frequency of 20 GHz.…”

Section: The Circuit Descriptionmentioning

confidence: 99%

A SiGe frequency quadrupler for M-QAM carrier recovery

Ulusoy

Liu

Trasser

et al. 2010

2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

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Abstract-In this paper a frequency quadrupler circuit, integrated with a commercially available SiGe HBT technology (fT /fmax ≈ 80 / 90 GHz) is presented. The quadrupler consists of two Gilbert cell mixers stacked as squarers. The measured maximum conversion gain is 0.6 dB for an input level of -9 dBm. The circuit is optimized for M-QAM carrier recovery, and the performance was tested by applying QPSK and 16QAM modulated signals with 4 Gbit/s data rate at the input. Both experimental and simulated results are presented. The fully integrated chip is operated from a single 2.5 V DC supply and draws 22.3 mA current.

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A frequency doubler with high conversion gain and good fundamental suppression

Cited by 17 publications

References 6 publications

Wideband 110 GHz frequency quadrupler for an FMCW imager in 0.13-μm SiGe:C BiCMOS process

Wideband 110 GHz frequency quadrupler for an FMCW imager in 0.13-μm SiGe:C BiCMOS process

F-band frequency octupler in 0.13-μm SiGe:C BiCMOS with 2 mW output power

A SiGe frequency quadrupler for M-QAM carrier recovery

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A frequency doubler with high conversion gain and good fundamental suppression

Cited by 17 publications

References 6 publications

Wideband 110 GHz frequency quadrupler for an FMCW imager in 0.13-&#x03BC;m SiGe:C BiCMOS process

Wideband 110 GHz frequency quadrupler for an FMCW imager in 0.13-&#x03BC;m SiGe:C BiCMOS process

F-band frequency octupler in 0.13-&#x03BC;m SiGe:C BiCMOS with 2 mW output power

A SiGe frequency quadrupler for M-QAM carrier recovery

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About

Wideband 110 GHz frequency quadrupler for an FMCW imager in 0.13-μm SiGe:C BiCMOS process

Wideband 110 GHz frequency quadrupler for an FMCW imager in 0.13-μm SiGe:C BiCMOS process

F-band frequency octupler in 0.13-μm SiGe:C BiCMOS with 2 mW output power