A flip-chip high efficiency X-band HPA

Cameron, P.; Pan, Wen; Hanz, C.; Nicklaus, R.; Chu, Pao-Hsien; Wong, D.; Cisco, T.C.

doi:10.1109/mwsym.1997.602942

Cited by 6 publications

(5 citation statements)

References 8 publications

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“…Compared to previously reported coplanar HPAs [3], this represents a chip-size reduction of 20 %, comparable to the size of compact state-of-the-art microstrip HPAs having the same output power levels [2]. It demonstrates as well, the potential of coplanar technology for very high power applications.…”

Section: Resultsmentioning

confidence: 66%

“…[ 1,2]), while coplanar waveguide technology (CPW) did not find common use in power applications [3]. The reason is the poor power handling capability of CPW, resulting &om the high thermal resistance of thick GaAs substrates, and the absence of via-holes and backside metallization..…”

Section: Introductionmentioning

confidence: 99%

“…email: alexandre.bessemouli~~~s-g~s.com the CPW to realize lower cost power MMICs at millimeterwave fiequencies [6-81. This paper presents a 4-5-Watt power amplifier MMIC, that has the size of compact stateof-the-art microstrip PAS [2], and that is 20 % smaller than previously reported X-band coplanar HPAs [3].…”

Section: Introductionmentioning

confidence: 99%

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A 4-Watt X-band compact coplanar high power amplifier MMIC with 18-dB gain and 25-% PAE

Bessemoulin

Quay²,

Ramberger³

et al. 2002

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

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The performance of a compact coplanar (CPW) microwave monolithic integrated circuit (MMIC) amplifier with high output power in the X-band is presented. Based on our 0.3-pm gate length GaAs power PHEMT process on 4" wafer, this two-stage amplifier, having a chip size of 16mm2, averages 4 Watts CW and 2 5 % PAE in the Xband, with more than 18-dE4 linear gain. Peak output powers of P-ldB=36.3 dBm (4.3 Watts) and P, of 36.9 dBm (4.9 Watt) at 10GHz with a power added efficiency of 35 % were also measured. Compared to previously reported X-band coplanar HPA, this represents a chip size reduction of 20 %, comparable to the size of compact state-of-the-art microstrip PAS.

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Section: Resultsmentioning

confidence: 66%

Section: Introductionmentioning

confidence: 99%

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A 4-Watt X-band compact coplanar high power amplifier MMIC with 18-dB gain and 25-% PAE

Bessemoulin

Quay²,

Ramberger³

et al. 2002

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

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“…R&D efforts on millimeter-wave packaging should focus on the high-frequency compatibility of a standard Sideveloped flip-chip process and materials set, since any significant deviation in new materials or process schemes will likely never be adopted. For example, Hughes adapted Delco's flip-chip process for use on GaAs [ 6 ] .…”

Section: Chip-on-boardmentioning

confidence: 99%

Roadmapping RFIC test

Strid

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)

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“…Introduction : Flip-chip technology (FC) is a promising candidate for use in phased array antennas needed in new generation of broadband multimedia satellites where thermal management and miniaturization are key enabling criterias. Applying flipchip technology to high power GaAs devices (HBTs and PHEMTs) have been implemented by several Research Institutes and company's over the past few years with impressive results [1] [2] [3]. If most of gold assembly process have been reviewed (thermocompression (TC), AuSn and SnPbAg solder reflow, and thermosonic) in these papers, eutectic AuSn solder reflow retained the most attention because of lower bonding load applied during the process, but it is also of lower interest because of lower thermal conductivity of eutectic AuSn.…”

mentioning

confidence: 99%

Power flip-chip assembly for space application using HBT in Ku band

Vendier¹,

George²,

Fraysse³

et al.

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd Annual Technical Digest 2000. (Cat. No.00CH37084)

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Haese, P-A. Rolland5Alcatel Space -26 av JF Champollion, BPI187 3 1037-TOULOUSE CEDEX 1, France Fax : 33 5 34 35 69 4' 7 Phone : 33 5 34 35 66 35 Summary : Flip-chip assembly using pure Au-Au thermocompression process have been implemented for use in power HBT. Thermal path optimization has conducted to measure 30 % decrease of thermal resistance of flip-chip mounted HBT compared to face up mounted. In best configuration (thermal bump on top of emitter finger) it is anticipated to reach 40 % decrease. First demonstration of this technology has been done on HBT single devices. It is shown that no electrical degradation occurred after thermocompression even &er an aging of 300 thermal cyle (-55OC, +125OC). Further validation will be done through high power amplifier design, fabrication and test with simulated performances of 2.5 W output power in Ku band, 19 dB linear gain and over 35 % power added efficiency.

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A flip-chip high efficiency X-band HPA

Cited by 6 publications

References 8 publications

A 4-Watt X-band compact coplanar high power amplifier MMIC with 18-dB gain and 25-% PAE

A 4-Watt X-band compact coplanar high power amplifier MMIC with 18-dB gain and 25-% PAE

Roadmapping RFIC test

Power flip-chip assembly for space application using HBT in Ku band

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