The performance of a compact coplanar (CPW) microwave monolithic integrated circuit (MMIC) amplifier with high output power in the X-band is presented. Based on our 0.3-pm gate length GaAs power PHEMT process on 4" wafer, this two-stage amplifier, having a chip size of 16mm2, averages 4 Watts CW and 2 5 % PAE in the Xband, with more than 18-dE4 linear gain. Peak output powers of P-ldB=36.3 dBm (4.3 Watts) and P, of 36.9 dBm (4.9 Watt) at 10GHz with a power added efficiency of 35 % were also measured. Compared to previously reported X-band coplanar HPA, this represents a chip size reduction of 20 %, comparable to the size of compact state-of-the-art microstrip PAS.
-This work is a comprehensive experimental investigation of chip to package wirebond interconnects for chip-package co-design. Wirebonds are interconnect bottlenecks in RF design, but are difficult to avoid due to their low cost and manufacturing ease. We have shown measurements on wirebonds in coplanar configuration with different return paths and also the cross coupling. We have also extracted lumped and distributed models and demonstrate the excellent agreement with measurements atleast upto 15GHz. We have proposed multi-wirebonds as a potential solution for better impedance matching. Different types of inductors with Q-factors of upto 100 have also been illustrated. We show influence of encapsulant on wirebonds and finally we also demonstrate a methodology to extract the time-domain response from S-parameters.
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