Power flip-chip assembly for space application using HBT in Ku band

Vendier, O.; George, Sébastien; Fraysse, Jean-Philippe; Rogeaux, E.; Drevon, C.; Cazaux, J.-L.; Floriot, D.; Caillas-Devignes, N.; Blanck, H.; Doser, W.; Auxemery, P.; Ceuninck, W. De; Petersen, Ronald C.; Haese, N.; Rolland, P.A.

doi:10.1109/gaas.2000.906313

Cited by 6 publications

(1 citation statement)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…So it is always desired to reduce this source inductance to maximize gain and to increase the operational frequency. Several methods such as sheet grounding or metal bridging, 7 flip chip technology 8,9 on the active side of the device and via hole technology, and source island via grounding 10,11 on the back side of the wafer have been used. There is a large reduction in common lead source inductance by the method of via hole connections from the back side of the device substrate as reported by Kohn 12 in 1975.…”

mentioning

confidence: 99%

Review: Back-Side via Hole Etching Process for Grounding GaAs Based Monolithic Microwave Integrated Circuits

Agarwal

Rawal

Vyas

2005

J. Electrochem. Soc.

View full text Add to dashboard Cite

Developments in the etching process for fabrication of back-side via holes in GaAs based monolithic microwave integrated circuits are reviewed. Attention is focused on critical issues concerning via hole fabrication. The requirements of the process of via hole etching are considered. The suitability of various fabrication techniques, and the associated chemistry, has been examined. The effects of various process parameters such as power, pressure, and gas flow rate on the etch characteristics have been discussed. The influence of the masking material, via hole dimensions and the wafer size on the etch characteristics have been discussed from the point of view of increasing packing density in advanced chip fabrication. Finally, the state of the art and the issues concerning the via hole etching process are described.

show abstract

mentioning

confidence: 99%

Review: Back-Side via Hole Etching Process for Grounding GaAs Based Monolithic Microwave Integrated Circuits

Agarwal

Rawal

Vyas

2005

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

Thermal management of power HBT in pulsed operating mode

Floriot

Jacquet

Chartier

et al. 2005

2005 European Microwave Conference

View full text Add to dashboard Cite

We focus this paper on the improvement of the thermal management of power transistor based on the InGaP / GaAs HBT technology and specially for pulsed mode application Applied to very HBT high power transistor, from 10W to 3W, respectively for L to Ku bands radar applications, a specific study has been done to suggest new opportunities if we take into account the transient or dynamic behavior of the transistor in pulse operating mode. From very short pulse (1 µs) to very long pulse (≈ ≈ ≈ ≈ 1 ms), a analysis has been performed with as a consequence a strong improvement of thermal impedance (Zth) through specific designs of the thermal shunt (material -shape) present at the front side. We chose to develop the concept of "thermal sponge" on power HBT transistor acting as a very efficient thermal capacitance to suppress thermal variation inside the pulse and improving as a consequence the CW thermal resistance. Two approaches have been compared : the first one with the support of very thick metal growth directly on the thin gold thermal shunt, the second one with a very small part of diamond substrate directly on top the same thermal shunt. As a conclusion, for long pulse application greater than 200 µs up to 1 ms, the diamond approach gives superior result with 30% of improvement on the temperature rising.

show abstract