2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)
DOI: 10.1109/mwsym.2001.967278
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Ka band power pHEMT technology for space power flip-chip assembly

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Cited by 5 publications
(3 citation statements)
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“…Isolation of strip-line couplers can be improved by introducing lumped or distributed capacitors at the edges or in the center of the coupled region. 3,4 In the broadside coupled strip-line couplers, capacitors are connected to the ground in shunt capacitive compensation technique. 5 Recently, Slawomir et al 6 high power rf capacitors are large in size and lossy above 10 MHz frequency.…”
Section: Introductionmentioning
confidence: 99%
“…Isolation of strip-line couplers can be improved by introducing lumped or distributed capacitors at the edges or in the center of the coupled region. 3,4 In the broadside coupled strip-line couplers, capacitors are connected to the ground in shunt capacitive compensation technique. 5 Recently, Slawomir et al 6 high power rf capacitors are large in size and lossy above 10 MHz frequency.…”
Section: Introductionmentioning
confidence: 99%
“…Cylindrical bumps, with 30 µm diameter and height, are laid out on the circuit to allow the further flip-chip assembly [2]. Microwave and bias probe pads are also added in the layout in order to be able to measure the amplifier before the flip-chip report.…”
Section: Circuit Designmentioning
confidence: 99%
“…This cost saving can further be improved by using a flip-chip assembly which achieves simultaneously the mechanical and electrical link between the chip and its mounting substrate. Moreover, flip-chip report is automatizable and compact [1] and thermal bumps implemented on the source pads of the transistors reduce the thermal resistance of the devices [2]. However, it makes necessary the use of a coplanar technology in order to decrease the carrier substrate detrimental influence on the circuit behavior [3].…”
Section: Introductionmentioning
confidence: 99%