A FinFET with one atomic layer channel

Chen, Mao-Lin; Sun, Xingwei; Liu, Huan; Wang, Hanwen; Zhu, Qian‐Bing; Wang, Shasha; Du, Haifeng; Dong, Baojuan; Zhang, Jing; Sun, Yun; Qiu, Song; Alava, Thomas; Liu, Song; Sun, Dongming; Han, Zheng

doi:10.1038/s41467-020-15096-0

Cited by 99 publications

(73 citation statements)

References 30 publications

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“…The emergence of artificial intelligence and 5G communication requires electronics with greater computing performance and higher energy efficiency. With their abundance and the rich variety of electronic properties, the family of atomically thin two-dimensional (2D) materials is a promising choice in the next generation of very-large-scale-integration (VLSI) technology [1][2][3][4]. Electronics devices based on atomically thin 2D materials such as transition metal sulfides, black phosphorus, and graphene, have been intensively studied during the past decade.…”

Section: Introductionmentioning

confidence: 99%

Field-effect at electrical contacts to two-dimensional materials

et al. 2021

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The inferior electrical contact to two-dimensional (2D) materials is a critical challenge for their application in post-silicon very large-scale integrated circuits. Electrical contacts were generally related to their resistive effect, quantified as contact resistance. With a systematic investigation, this work demonstrates a capacitive metal-insulator-semiconductor (MIS) field-effect at the electrical contacts to 2D materials: The field-effect depletes or accumulates charge carriers, redistributes the voltage potential, and gives rise to abnormal current saturation and nonlinearity. On one hand, the current saturation hinders the devices’ driving ability, which can be eliminated with carefully engineered contact configurations. On the other hand, by introducing the nonlinearity to monolithic analog artificial neural network circuits, the circuits’ perception ability can be significantly enhanced, as evidenced using a coronavirus disease 2019 (COVID-19) critical illness prediction model. This work provides a comprehension of the field-effect at the electrical contacts to 2D materials, which is fundamental to the design, simulation, and fabrication of electronics based on 2D materials. Electronic Supplementary Material Supplementary material (results of the simulation and SEM) is available in the online version of this article at 10.1007/s12274-021-3670-y.

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Section: Introductionmentioning

confidence: 99%

Field-effect at electrical contacts to two-dimensional materials

et al. 2021

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“…Microelectronics revolution had being sustained by the motto “smaller is better” until the end of the geometric scaling era governed by Dennard's scaling guidelines. [ 4–6 ] Nowadays, equivalent scaling [ 7 ] based on semiconductor material substitutions [ 6,8,9 ] or/and structure innovations [ 6,9–12 ] has been extensively investigated to meet the continuously increasing high‐speed demands in modern electronics. Despite vigorous research efforts and impressive progresses, [ 6,8–13 ] severe challenges still exist in manufacturing capability limit, [ 2,7,11 ] short‐channel effect, [ 14,15 ] and heat generation.…”

Section: Introductionmentioning

confidence: 99%

“…[ 4–6 ] Nowadays, equivalent scaling [ 7 ] based on semiconductor material substitutions [ 6,8,9 ] or/and structure innovations [ 6,9–12 ] has been extensively investigated to meet the continuously increasing high‐speed demands in modern electronics. Despite vigorous research efforts and impressive progresses, [ 6,8–13 ] severe challenges still exist in manufacturing capability limit, [ 2,7,11 ] short‐channel effect, [ 14,15 ] and heat generation. [ 2 ] These challenges block operating speed enhancement for future electronic applications such as 6G wireless communication, [ 16,17 ] Internet of Things, [ 18 ] and microsystems in harsh environments.…”

Section: Introductionmentioning

confidence: 99%

Sub‐Picosecond Nanodiodes for Low‐Power Ultrafast Electronics

Li¹,

Zhang²,

He³

et al. 2021

Advanced Materials

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The tradeoff between ultrahigh speed and low power is a dominant challenge in continuously improving modern electronics. Fundamental electronic devices with ultrafast response are highly desired in low‐power electronics. However, conventional semiconductor electronic devices now near the speed limit from the physical roadblocks including short‐channel effect, restricted carrier velocity, and heat death. Currently emerging electronic devices also face formidable difficulties to achieve high‐speed performance at low operating voltage without heat disturbance. Here, a novel fabricated coplanar tip‐to‐edge semiconductor‐free nanostructure with asymmetric sub‐10 nm air channel is reported, stimulating electric‐field accelerated scattering‐free transport of electrons and resulting in ultrafast response of record sub‐picoseconds at a low turn‐on voltage around 0.7 V. Simulation results show a typical electrical response down to 64 fs, which is ≈103 times faster than that of conventional semiconductor electronic devices. The coplanar asymmetric nanostructure allows a high rectifying ratio up to 106 which is superior to that of the most promising 2D semiconducting nanodiodes. In addition, heat death is overcome due to the inherent advantages from the novel nanostructure and underlying working mechanism. The intriguing nanodiodes will attract broadly interests in electronics due to their potential as rudimentary building blocks in ultrafast electronic integrated circuits.

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“…[ 9–11 ] Recently, TMD devices having a 3D structure beyond a planar structure, and TMD circuits fabricated by wafer‐level processes have been widely studied. [ 12–14 ] Therefore, circuits based on TMD materials require further research in the fields of metal contact, patterning, encapsulation, temperature dependence, and reliability. [ 13–19 ] Since TMD devices have a large surface/volume ratio and are highly affected by charge transferring of adsorbates such as H 2 O and O 2 , encapsulation is essential.…”

Section: Introductionmentioning

confidence: 99%

Cyclic Thermal Effects on Devices of Two‐Dimensional Layered Semiconducting Materials

Kim

Kaczer

Verreck

et al. 2021

Adv Elect Materials

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Field‐effect transistors (FETs), using transition metal dichalcogenides (TMD) as channels, have various types of interfaces, and their characteristics are sensitively changed in temperature and electrical stress. In this article, the effect of fast cyclic thermal stress on the performance of FETs using TMD as a channel is investigated and introduced. The Al2O3 passivation layer is deposited onto the TMD channel by atomic layer deposition process, and the hysteresis decreases and the direction changes from clockwise to counterclockwise. Applying cyclic thermal stress that rapidly heats and cools by 90 K in a 20 s cycle increases and decreases drain current repeatedly as charges move between the TMD channel and the interface traps. As cyclic thermal stress is applied, permanent interfacial damage occurs, resulting in increased interface trap density at the bottom and decreased hysteresis. These experimental results are also shown through technology computer‐aided design simulations. In addition, series resistance and mobility attenuation factor increase due to the concentration of the conduction paths at the bottom of the channel.

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A FinFET with one atomic layer channel

Cited by 99 publications

References 30 publications

Field-effect at electrical contacts to two-dimensional materials

Field-effect at electrical contacts to two-dimensional materials

Sub‐Picosecond Nanodiodes for Low‐Power Ultrafast Electronics

Cyclic Thermal Effects on Devices of Two‐Dimensional Layered Semiconducting Materials

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