A family of CMOS analog and mixed signal circuits in SiC for high temperature electronics

Rahman, Ashfaqur; Shepherd, Paul; Bhuyan, Shaila Amin; Ahmed, Shamim; Akula, Sai Kiran; Caley, Landon; Mantooth, H. Alan; Di, Jia; Francis, A. Matthew; Holmes, James

doi:10.1109/aero.2015.7119302

Cited by 22 publications

(7 citation statements)

References 14 publications

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“…28,29 Thus, to the best of our knowledge, there has been no reliable switching behaviors observed in memristors at temperatures above 200 o C 29,30 , which has greatly limited their potential applications in harsh electronics, such as those demanded in aerospace, military, automobile, geothermal, oil and gas industries. While common high temperature electronic materials, such as SiC and III-nitride 31,32 , are not adoptable in fabricating memristors, searching for new materials and structures for robust memristors with good performance becomes highly desirable.…”

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confidence: 99%

Robust memristors based on layered two-dimensional materials

et al. 2018

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Memristors are a leading candidate for future storage and neuromorphic computing technologies 1-10 due to characteristics such as device scalability, multi-state switching, fast switching speed, high switching endurance and CMOS compatibility 6,[11][12][13][14][15][16] . Most research and development efforts have been focused on improving device switching performance in optimal conditions, and the reliability of memristors in harsh environments such as at high temperature and on bending substrates has so far received much less attention. Since the programming processes in memristors based on traditional oxide materials mostly rely on ion moving and ionic valence changing 16,17 , the thermal instability at elevated temperatures could result in device failure 18 . Thus, to the best of our knowledge, there has been no reliable switching behaviours observed in memristors at temperatures above 200 °C 18,19 , which limits their potential application in harsh electronics such as those demanded in aerospace, military, automobile, geothermal, oil and gas industries. Common high temperature electronic materials, such as SiC and III-nitride 20,21 , are not adoptable in fabricating memristors, and therefore searching for new materials and structures for robust memristors with good performance is desirable.By stacking two-dimensional (2D) layered materials together 22-30 , van der Waals (vdW) heterostructures can combine the superior properties of each 2D component. 2D materials have shown excellent structural stability 31,32 and electrical properties, which could provide significant improvements in the robustness of electronic devices. For example, graphene possesses unparalleled breaking strength, and ultra-high thermal and chemical stabilities 33 ; molybdenum disulfide (MoS 2 ) has shown good flexibility, large Young's modulus (comparable to stainless steel), 34 and excellent thermal stability up to 1,100 °C 32 ; and various functionalized 2D material layers, or certain grain boundaries within 2D materials, have shown switching behaviours [35][36][37][38][39][40][41][42][43][44] . Since both the thickness and roughness of 2D layered materials can be controlled accurately at the atomic scale, the reliability and uniformity of the electronic devices based on such materials and their vdW heterostructures could also be optimized.In this Article, we report robust memristors based on a vdW heterostructure made of fully layered 2D materials (graphene/MoS 2−x O x / graphene), which exhibit repeatable bipolar resistive switching with endurance up to 10 7 and high thermal stability with an operating temperature of up to 340 °C. The MoS 2−x O x layer was found to be responsible for the high thermal stability of the devices by performing high temperature in situ high-resolution transmission electron microscopy (HRTEM) studies. Further in situ scanning transmission electron microscopy (STEM) investigations on the cross section of a functional device revealed a well-defined conduction channel and a switching mechanism based on the migr...

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Robust memristors based on layered two-dimensional materials

et al. 2018

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“…The MSCAD laboratory also developed BSIM4 models for HiTSiC FETs [17]. The first fabrication run, Vulcan I, led to the design and implementation of a high temperature phase-locked loop, voltage and current references, a Schmitt trigger and an operational transconductance amplifier [18] [19]. The voltage comparator being reported upon here was designed and fabricated in the second run, Vulcan II, and has been tested up to 450°C.…”

Section: B Cmos Sic and Its High Temperature Applicationsmentioning

confidence: 99%

A high temperature comparator in CMOS SiC

Rahman

Addington

Barlow

et al. 2015

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

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This paper demonstrates the first reported high temperature voltage comparator in CMOS silicon carbide. The comparator was designed in a 1.2 μm CMOS SiC process and has been tested for a voltage supply of 12 V to 15 V. The rail to rail voltage comparator has been tested up to 450°C with rise and fall times of 31 ns and 22 ns respectively, and positive and negative propagation delays of 108 ns and 107 ns respectively.

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“…The lab also developed BSIM4 models binned at temperatures of 25 °C, 100 °C, 200 °C and 300 °C for the SiC FETs [21]. The first fabrication run, Vulcan I, consisted of a high temperature phase-locked loop, voltage and current references, a Schmitt trigger and an operational transconductance amplifier [22], [23]. The first run also included standard digital cells in both synchronous and asynchronous logic that have been tested at over 300 °C [24][25][26].…”

Section: B Sic Cmos and High Temperature Applicationsmentioning

confidence: 99%

High-Temperature SiC CMOS Comparator and op-amp for Protection Circuits in Voltage Regulators and Switch-Mode Converters

Rahman

Roy

Murphree

et al. 2016

IEEE J. Emerg. Sel. Topics Power Electron.

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1 1 Abstract-This paper describes a high temperature voltage comparator and an operational amplifier in a 1.2 µm silicon carbide CMOS process. These circuits are used as building blocks for designing a high temperature SiC low-side over current protection circuit. The over current protection circuit is used in the protection circuitry of a SiC FET gate driver in power converter applications. The op amp and the comparator have been tested at 400 °C and 550 °C temperature respectively. The op amp has an input common-mode range of 0-11.2 V, DC gain of 60 dB, unity gain bandwidth of 2.3 MHz and a phase margin of 48° at 400 °C. The comparator has a rise time and a fall time of 38 ns and 24 ns, respectively, at 550 °C. The over current protection circuit, implemented with these analog building blocks, is designed to sense a voltage across a sense resistor up to 0.5 V. Keywords-comparator, op amp, current sensor, silicon carbide, high temperature electronics, wide bandgap ICs. I.K. Addington is with the

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A family of CMOS analog and mixed signal circuits in SiC for high temperature electronics

Cited by 22 publications

References 14 publications

Robust memristors based on layered two-dimensional materials

Robust memristors based on layered two-dimensional materials

A high temperature comparator in CMOS SiC

High-Temperature SiC CMOS Comparator and op-amp for Protection Circuits in Voltage Regulators and Switch-Mode Converters

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