A high temperature comparator in CMOS SiC

Rahman, Ashfaqur; Addington, Kyle; Barlow, M.; Ahmed, Shamim; Mantooth, H. Alan; Francis, A. Matthew

doi:10.1109/wipda.2015.7369323

Cited by 10 publications

(1 citation statement)

References 21 publications

(19 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A decade ago, Raytheon Systems Limited developed a proprietary 1.2 μm SiC CMOS technology, called high temperature silicon carbide (HiTSiC), and demonstrated integrated circuits [14], [15]. The group of Mantooth at the University of Arkansas demonstrated a comparator [16], 8-bit digitalto-analog converter (DAC) [17], voltage and current references [18], gate driver [19], complex digital circuits [20], protection circuits in voltage regulators and switch-mode converters [21], digitally controlled pulsewidth modulation (PWM) generator [22], and data converters [23]. However, the HiTSiC technology was discontinued in 2018.…”

Section: Integrated Digital and Analog Circuit Blocks In Amentioning

confidence: 99%

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

Romijn

Vollebregt

Middelburg

et al. 2022

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years in many research fields, such as power electronics, high operation temperature circuits, harsh environmental sensing, and more. To facilitate research on complex integrated SiC circuits, ensure reproducibility, and cut down cost, the availability of a low-voltage SiC technology for integrated circuits is of paramount importance. Here, we report on a scalable and open state-of-the-art SiC CMOS technology that addresses this need. An overview of technology parameters, including MOSFET threshold voltage, subthreshold slope, slope factor, and process transconductance, is reported. Conventional integrated digital and analog circuits, ranging from inverters to a 2-bit analog-to-digital converter, are reported. First yield predictions for both analog and digital circuits show great potential for increasing the amount of integrated devices in future applications.

show abstract