This paper describes the simulation and test results of a family of analog and mixed signal circuits in silicon carbide CMOS technology at temperatures of 300⁰ ⁰ ⁰ ⁰C and above. As SiC and wide bandgap devices in general grow in popularity for efficient and stable operation in high temperature and harsh environment applications, CMOS SiC integrated circuits can open up a new frontier of opportunity for miniaturization and system dependability. The building block circuits presented here can serve as the basis of rugged SiC system-on-chips for extreme environment applications.
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