A facile method for the synthesis of transfer-free graphene from co-deposited nickel–carbon layers

An, Seongpil; Lee, Geun Hyuk; Jang, Seong Woo; Hwang, Sung Ho; Lim, Sang Ho; Han, Seunghee

doi:10.1016/j.carbon.2016.07.066

Cited by 10 publications

(6 citation statements)

References 43 publications

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“…The 2D band broadens with the FWHM increasing from 80 to 90 cm −1 , which also points to the formation of multilayer graphene. It seems that graphene obtained at 550 o C has less structural defects, and the quality of graphene formed at 550 o C is comparable with that obtained at a much higher temperature of 800 o C, as reported elsewhere …”

Section: Resultssupporting

confidence: 86%

Low‐Temperature Synthesis of Graphene by ICP‐Assisted Amorphous Carbon Sputtering

Zhou

Levchenko

et al. 2018

ChemistrySelect

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Efficient and affordable synthesis of graphene at low temperatures remains a significant challenge that potentially limits the use of this material in real-life applications. We describe here a simple, efficient, highly controllable technique to synthesize graphene by sputtering carbon from a solid source with the assistance of inductively coupled plasma (ICP), followed by controllable low-temperature annealing at about 550 o C. Raman scattering and X-ray diffraction characterizations have revealed the formation of a few layer graphene of high quality, confirmed by a low (∼ 0.48) I D /I G ratio. Raman analysis of samples formed at various annealing temperatures has revealed an upper limit for annealing temperature of 585 o C, beyond which the formed graphene reversibly dissolves in the metal. The ICP-assisted process was innovatively employed to improve the quality of thus-fabricated graphene at low temperatures. The mechanism of graphene formation was attributed to the metal induced graphitization in combination with the carbon precipitation onto the catalyst surface.

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Section: Resultssupporting

confidence: 86%

Low‐Temperature Synthesis of Graphene by ICP‐Assisted Amorphous Carbon Sputtering

Zhou

Levchenko

et al. 2018

ChemistrySelect

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“…These properties mean that graphene could be used in many technological fields including transparent electrodes, field emitters, biosensors, and batteries, to cite but a few examples. Many techniques exist for producing graphene including chemical vapor deposition, chemical reduction of graphene oxide, exfoliation, epitaxial growth on SiC or metal substrates, and physical vapor deposition methods including pulsed laser deposition (PLD) . Whatever the synthesis route chosen, many experimental factors affect the graphene nanoarchitecture and properties.…”

Section: Introductionmentioning

confidence: 99%

Raman study of the substrate influence on graphene synthesis using a solid carbon source via rapid thermal annealing

Bleu

Bourquard

Loir

et al. 2019

J Raman Spectroscopy

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We report the results of a comparative investigation of graphene films prepared on Si(100) and fused silica (SiO2) combining pulsed laser deposition and rapid thermal annealing using Ni catalyst. The effect of modifying the substrate and/or growth temperature (600–1,000°C) of graphene synthesis was investigated by Raman microspectroscopy mapping. Graphene grown on Si(100) was multilayered, and various nickel silicide phases had formed underneath, revealing dependence on the growth temperature. Films prepared on SiO2 mainly comprised bilayered and trilayered graphene, with no traces of nickel silicide. Analysis of Raman D, G, and 2D peak intensities and positions showed that modifying the growth temperature had different effects when a Si(100) or a SiO2 substrate is used. These findings advance our understanding of how different combinations of substrate and thermal processing parameters affect graphene synthesis from solid carbon source using nickel as a catalyst. This knowledge will enable better control of the properties of graphene film (defects, number of layers, etc.) and will have a high potential impact on the design of graphene‐based devices for scientific or industrial applications.

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“…An intact Cu film is a prerequisite for preparing a continuous graphene film because the graphene synthesized via metal-catalytic CVD is typically limited within the area covered by the catalytic metal. 46 To improve the coverage of the Cu film, the chamber pressure was controlled at 90.0 Torr (upper limit of the LPCVD system utilized in this study) for graphene growth (Table S2, P10). Under a controlled pressure of 90.0 Torr, a confluent Cu film (Figure 2i) with only a few pinholes (Figure 2j) was obtained within the confined reaction space.…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, the experimental design with a confined space allows an intact Cu film to be maintained throughout the CVD process. An intact Cu film is a prerequisite for preparing a continuous graphene film because the graphene synthesized via metal-catalytic CVD is typically limited within the area covered by the catalytic metal . To improve the coverage of the Cu film, the chamber pressure was controlled at 90.0 Torr (upper limit of the LPCVD system utilized in this study) for graphene growth (Table S2, P10).…”

Section: Resultsmentioning

confidence: 99%

Spatial Confinement Approach Using Ni to Modulate Local Carbon Supply for the Growth of Uniform Transfer-Free Graphene Monolayers

et al. 2020

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Direct growth of high-quality graphene on dielectric substrates without a sophisticated transfer process is one of the key challenges to effectively integrate graphene synthesis with the existing semiconductor manufacturing process. In this study, we take advantages offered by a customized reactor to realize the synthesis of uniform transfer-free graphene monolayers on SiO2/Si substrates via the metal-catalytic chemical vapor deposition method. The optimal reactor is designed to be a Ni-covered quartz slit with a confined reaction space (length × width × height = 85 × 13 × 0.55 mm3). The slit structure of this reactor offers a spatially confined environment for effectively suppressing Cu evaporation and modulating the growth kinetics of graphene. In addition, the Ni cover serves as a carbon absorbent for regulating the local concentration of carbon species within the slit reactor, which increases the monolayer content of the produced graphene. With the optimal synthesis protocol, transfer-free graphene with low defects and high monolayer content (>90%) was prepared directly on SiO2/Si substrates as continuous large-area films (1 × 1 cm2) or microscale patterns with sheet resistance and field-effect mobility of 334 Ω/sq and 962 cm2/(V s), respectively.

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A facile method for the synthesis of transfer-free graphene from co-deposited nickel–carbon layers

Cited by 10 publications

References 43 publications

Low‐Temperature Synthesis of Graphene by ICP‐Assisted Amorphous Carbon Sputtering

Low‐Temperature Synthesis of Graphene by ICP‐Assisted Amorphous Carbon Sputtering

Raman study of the substrate influence on graphene synthesis using a solid carbon source via rapid thermal annealing

Spatial Confinement Approach Using Ni to Modulate Local Carbon Supply for the Growth of Uniform Transfer-Free Graphene Monolayers

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