A discharge-based multi-pulse technique (DMP) for probing electron trap energy distribution in high-k materials for Flash memory application

Zheng, Xiaolong; Zhang, W.D.; Govoreanu, B.; Zhang, J.F.; Houdt, J. Van

doi:10.1109/iedm.2009.5424403

Cited by 14 publications

(15 citation statements)

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“…The discharge is driven mainly by Vdis and there is little difference when time increases from 1 to 1000 sec. This agrees well with early works that carrier tunneling completes in seconds for thin dielectric [12,18]. Unless stated otherwise, a discharge time of 100 sec was used.…”

Section: Devices and Experimentssupporting

confidence: 87%

“…All tests were at 125 ºC. To probe ETs energy profile, the discharge based technique was implemented [18]. The Vg waveform is shown in Fig.…”

Section: Devices and Experimentsmentioning

confidence: 99%

“…2 is used as a demonstration for the extraction of energy distribution. Following the early works [7,8,18], ΔVth is converted to ΔNt, the equivalent trap density at the interface of interfacial layer (IL) and HK using eq. (1).…”

Section: A Extraction Of Ets Energy Distributionmentioning

confidence: 99%

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Insight Into Electron Traps and Their Energy Distribution Under Positive Bias Temperature Stress and Hot Carrier Aging

Duan

Zhang

et al. 2016

IEEE Trans. Electron Devices

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Abstract-The access transistor of SRAM can suffer both Positive Bias Temperature Instability (PBTI) and Hot Carrier Aging (HCA) during operation. The understanding of electron traps (ETs) is still incomplete and there is little information on their similarity and differences under these two stress modes. The key objective of this paper is to investigate ETs in terms of energy distribution, charging and discharging properties, and generation. We found that both PBTI and HCA can charge ETs which center at 1.4eV below conduction band (Ec) of high-k (HK) dielectric, agreeing with theoretical calculation. For the first time, clear evidences are presented that HCA generates new ETs, which do not exist when stressed by PBTI. When charged, the generated ETs' peak is 0.2eV deeper than that of pre-existing ETs. In contrast with the power law kinetics for charging the pre-existing ETs, filling the generated ETs saturates in seconds, even under an operation bias of 0.9 V. ET generation shortens device lifetime and must be included in modelling HCA. A cyclic and anti-neutralization ETs model (CAM) is proposed to explain PBTI and HCA degradation, which consists of pre-existing cyclic electron traps (PCET), generated cyclic electron traps (GCET), and anti-neutralization electron traps (ANET).

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Section: Devices and Experimentssupporting

confidence: 87%

“…All tests were at 125 ºC. To probe ETs energy profile, the discharge based technique was implemented [18]. The Vg waveform is shown in Fig.…”

Section: Devices and Experimentsmentioning

confidence: 99%

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Insight Into Electron Traps and Their Energy Distribution Under Positive Bias Temperature Stress and Hot Carrier Aging

Duan

Zhang

et al. 2016

IEEE Trans. Electron Devices

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“…4 These applications require a knowledge of its electronic defect levels in order to explain its transport and charge trapping properties. [5][6][7][8] Electron transport in Al 2 O 3 is consistent with Poole-Frenkel hopping in a deep state lying at ϳ1.8 eV below the conduction band ͑CB͒ edge. The main intrinsic defect in high dielectric constant oxides is the oxygen vacancy 9,10 and Al 2 O 3 is expected to be similar.…”

mentioning

confidence: 57%

“…The calculated 0/Ϫ level of the oxygen vacancy of -Al 2 O 3 corresponds very well with the hopping and trapping level of at 1.6-2.0 eV below the CB edge found experimentally. [5][6][7][8] Despite the fact that oxygen is electronegative, so that V O possesses the trapped hole states + and 2+, it also traps excess electrons, as noted by Stashans. 11 It is this 0/Ϫ level that corresponds to the trapping level, not the more familiar 0 / + level.…”

mentioning

confidence: 99%

Oxygen vacancy levels and electron transport in Al2O3

2010

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Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications

Salomone

Lipovetzky

Carbonetto

et al. 2013

Journal of Applied Physics

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Al2O3-based dielectrics are currently considered as promising materials to use in nonvolatile memories. The electron trap density in this material is much higher than in conventional SiO2, being their characteristics critical for the application. Conventional capacitance-voltage (C-V) techniques were used to study the main effects of the electron traps on the electrical characteristics of MOS capacitors with atomic layer deposited Al2O3 as insulating layer. More detailed information about the trapping kinetics was obtained through the study of the constant capacitance voltage transient. Two different types of traps were found. One is responsible for the instabilities observed in C-V measurements, the other has characteristic trapping times three orders longer. A physical model is presented to explain the observed trapping kinetics exhibiting good agreement between experiments and simulations. The energy levels of the studied traps were determined at 2.2 and 2.6 eV below the Al2O3 conduction band, with densities of 2.9 × 1018 cm−3 and 1.6 × 1018 cm−3, respectively.

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A discharge-based multi-pulse technique (DMP) for probing electron trap energy distribution in high-k materials for Flash memory application

Cited by 14 publications

References 1 publication

Insight Into Electron Traps and Their Energy Distribution Under Positive Bias Temperature Stress and Hot Carrier Aging

Insight Into Electron Traps and Their Energy Distribution Under Positive Bias Temperature Stress and Hot Carrier Aging

Oxygen vacancy levels and electron transport in Al2O3

Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications

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